10 Gb/s error-free operation of an all-silicon C-band waveguide photodiode

CLEO: Science and Innovations, CLEO_SI 2012

Volumn , Issue , 2012, Pages

  Grote, Richard R ^a,b   Padmaraju, Kishore ^b   Driscoll, Jeffrey B ^a,b   Souhan, Brian ^a,b   Bergman, Keren ^b   Osgood, Richard M ^a,b  

^a Columbia University ^*  (United States)

^b Department of Earth and Environmental Sciences   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

10 GB/ S; CMOS COMPATIBLE; DATA RATES; DETECTOR SENSITIVITY; ERROR FREE OPERATIONS; ION IMPLANTED; PIN PHOTODIODE; WAVEGUIDE PHOTODIODES;

PHOTODIODES;

EID: 84871668433     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. H. Park et al., "A hybrid AlGaInAs-silicon evanescent waveguide photodetector," Opt. Express 15, 6044-6052 (2007).
2. S. Assefa et al., "CMOS-integrated high-speed MSM germanium waveguide photodetector," Opt. Express 18, 4986-4999 (2010).
3. L. Vivien et al., "42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide," Opt. Express 17, 6252-6257 (2009).
4. L. Chen et al., "High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding," Opt. Express 16, 11513-11518 (2008).
5. M. W. Geis et al., "Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response," Opt. Express 17, 5193-5204 (2009).
6. M. W. Geis et al., "CMOS-compatible all-Si high-speed waveguide photodiodes with responsivity in near-infrared communication band," IEEE Photon. Technol. Lett. 19, 152-154 (2007).
7. M. W. Geis et al., "All silicon infrared photodiodes: photo response and effects of processing temperature," Opt. Express 15, 16886-16895 (2007).