Effects of cobalt-60 gamma-rays on Ge-Se chalcogenide glasses and Ag/Ge-Se test structures

IEEE Transactions on Nuclear Science

Volumn 59, Issue 6, 2012, Pages 3093-3100

  Gonzalez Velo, Y ^a   Barnaby, H J ^a   Chandran, A ^a   Oleksy, D R ^a   Dandamudi, P ^a   Kozicki, M N ^a   Holbert, K E ^a   Mitkova, M ^b   Ailavajhala, M ^b   Chen, P ^b  

^a Arizona State University   (United States)

^b Boise State University   (United States)

Author keywords

Chalcogenide glass; memristors; photo diffusion; photo doping; radiation effects; total ionizing dose

Indexed keywords

ACTIVE METALS; CHALCOGENIDE GLASS; CHALCOGENS; COBALT-60; GAMMA-RAY IRRADIATION; HIGH ENERGY PHOTONS; INERT METALS; ION CONDUCTORS; NON-VOLATILE MEMORY TECHNOLOGY; PHOTO-DIFFUSION; PHOTODOPING; POSTIRRADIATION ANNEALING; RADIATION STRESS; RADIATION-INDUCED; SOLID-STATE ELECTROLYTE; TEST STRUCTURE; TOTAL IONIZING DOSE; TRANSIENT RADIATION;

COBALT; DATA STORAGE EQUIPMENT; GAMMA RAYS; GERMANIUM; GLASS; IONIZING RADIATION; MEMRISTORS; METAL IONS; METALS; PASSIVE FILTERS; RADIATION DAMAGE; RADIATION EFFECTS; RESISTORS; SILVER;

SEMICONDUCTOR DOPING;

EID: 84871380720     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2012.2224137     Document Type: Article

References (18)

1. Z. U. Borisova, Glassy Semiconductors. New York: Plenum Press, 1981.
2. M. N. Kozicki, M. Mitkova, M. Park, M. Balakrishnan, and C. Gopalan, "Information storage using nanoscale electrodeposition of metal in solid electrolytes, " Superlattices Microstruct., vol. 34, pp. 459-465, Dec. 2003.
3. M. N. Kozicki, M. Park, and M. Mitkova, "Nanoscale memory elements based on solid-state electrolytes, " IEEE Trans. Nanotechnol., vol. 4, pp. 331-338, May 2005. (Pubitemid 40794460)
4. L. Chua, "Memristor-The missing circuit element, " IEEE Trans. Circuit Theory, vol. 18, pp. 507-519, Sep. 1971.
5. R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-based resistive switching memories-Nanoionic mechanisms, prospects, and challenges, " Adv. Mater., vol. 21, pp. 2632-2663, Jul. 2009.
6. I. Valov, R. Waser, J. R. Jameson, and M. N. Kozicki, "Electrochemical metallization memories-Fundamentals, applications, prospects, " Nanotechnology, vol. 22, pp. 254003-254003, Jun. 2011.
7. R. Waser and M. Aono, "Nanoionics-based resistive switching memories, " Nature Mater., vol. 6, pp. 833-840, 2007. (Pubitemid 350064191)
8. [Online]. Available: http://www. adestotech. com
9. M. T. Kostyshin, E. V. Mikhailovskaya, and P. F. Romanenko, Sov. Phys. Solid St., vol. 8, pp. 451-453, 1966.
10. M. Kawasaki, J. Kawamura, Y. Nakamura, and M. Aniya, "Ionic conductivity of glasses, " Solid State Ionics, vol. 123, pp. 259-269, Aug. 1999.
11. M. A. Ureña, A. A. Piarristeguy, M. Fontana, and B. Arcondo, "Ionic conductivity in AgGeSe glasses, " Solid State Ionics, vol. 176, pp. 505-512, Feb. 2005.
12. A. Piarristeguy, M. Ramonda, A. Ureña, A. Pradel, and M. Ribes, "Phase separation in Ag-Ge-Se glasses, " J. Non-Cryst. Sol., vol. 353, pp. 1261-1263, May 2007. (Pubitemid 46584686)
13. M. N. Kozicki, "Personal Electronic Dosimeter, " United States Patent number 5, 500, 532, 1996.
14. A. V. Kolobov and S. R. Elliott, "Photo-doping of amorphous chalcogenides by metals, " Advances in Physics, vol. 40, pp. 625-684, Feb. 1991.
15. X. Feng, W. J. Bresser, and P. Boolchand, "Direct evidence of stiffness threshold in chalcogenide glasses, " Phys. Rev. Lett., vol. 78, pp. 4422-4425, Jun. 1997. (Pubitemid 127655514)
16. P. Boolchand, J. Grothaus, M. Tenhover, M. A. Hazle, and R. K. Grasselli, "Structure of glass: Spectroscopic evidence for broken chemical order, " Phys. Rev. B, vol. 33, pp. 5421-5434, Apr. 1986.
17. N. Terakado and K. Tanaka, "Electrical response of chalcogenide films in the photo-doping process, " Thin Film Solids, vol. 519, pp. 3773-3777, Mar. 2011.
18. M. Mitkova, M. N. Kozicki, H. C. Kim, and T. Alford, "Local structure resulting from photo and thermal diffusion of Ag in Ge-Se films, " J. Non-Crystalline Solids, vol. 338-340, pp. 552-556, 2004.