Origin of the blueshift of photoluminescence in a type-II heterostructure

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Jo, Masafumi ^a,b,d   Sato, Mitsuru ^a   Miyamura, Souta ^a   Sasakura, Hirotaka ^a   Kumano, Hidekazu ^a   Suemune, Ikuo ^a,c  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Blueshift; Excitons; GaAs; GaSb; Photoluminescence; Quantum well; Type II

Indexed keywords

EXCITONS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

EXCITATION RANGE; EXCITONIC EFFECT; GAAS; GASB; RATE-EQUATION ANALYSIS; SELF-CONSISTENT APPROACH; TYPE II; WELL REGION;

BLUE SHIFT;

EID: 84871244006     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-654     Document Type: Article

References (18)

1. Ledentsov NN, Böhrer J, Heinrichsdorff F, Grundmann M, Bimberg D, Ivanov SV, Meltser BY, Shaposhnikov SV, Yassievich IN, Faleev NN, Kop'ev PS, Alferov ZI: Radiative states in type-II GaSb/GaAs quantum wells. Phys. Rev. B 1995, 52:14058.
2. Hatami F, Grundmann M, Ledentsov NN, Heinrichsdorff F, Heitz R, Böhrer J, Bimberg D, Ruvimov SS, Werner P, Ustinov VM, Kop'ev PS, Alferov ZI: Carrier dynamics in type-II GaSb/GaAs quantum dots. Phys. Rev. B 1998, 57:4635.
3. Ribeiro E, Govorov AO, Carvalho W, Medeiros-Ribeiro G: Aharanovo-Bohm signature for neutral polarized excitons in type-II quantum dot ensembles. Phys. Rev. Lett. 2004, 92:126402.
4. Madureira JR, de Godoy MPF, Brasil MJSP, Iikawa F: Spatially indirect excitons in type-II quantum dots. Appl. Phys. Lett. 2007, 90:212105.
5. Alonso-Álvarez D, Alén B, García JM, Ripalda JM: Optical investigation of type II GaSb/GaAs self-assembled quantum dots. Appl. Phys. Lett. 2007, 91:263103.
6. Kawazu T, Mano T, Noda T, Sakaki H: Optical properties of GaSb/GaAs type-II quantum dots grown by droplet epitaxy. Appl. Phys. Lett. 2009, 94:081911.
7. Tatebayashi J, Khoshakhlagh A, Huang SH, Dawson LR, Balakrishnan G, Huffaker DL: Formation and optical characteristics of strain-relieved and densely stacked GaSb/GaAs quantum dots. Appl. Phys. Lett. 2006, 89:203116.
8. Dheeraj DL, Patriarche G, Zhou H, Hoang TB, Moses AF, Grønsberg S, Helvoort AT, Fimland BO, Weman H: Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaasSb inserts. Nano Lett. 2008, 8:4459.
9. Akopian N, Patriarche G, Liu L, Harmand JC, Zwiller V: Crystal phase quantum dots. Nano Lett. 2010, 10:1198.
10. Muto S: On a possiblity of wavelength-domain-multiplication memory using quantum boxes. Jpn. J. Appl. Phys. 1995, 34:L210.
11. Geller M, Kapteyn C, Muller-Kirsch L, Heitz R, Bimberg D: Hole storage in GaSb/GaAs quantum dots for memory devices. Phys. Stat. Sol. (b) 2003, 238:258.
12. Suzuki K, Hogg RA, Arakawa Y: Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy. J. Appl. Phys. 1999, 85:8349.
13. Ichii A, Tsou Y, Garmire E: An empirical rule for band offsets between III-V alloy compounds. J. Appl. Phys. 1993, 74:2112.
14. Noh MS, Ryou JH, Dupuis RD, Chang YL, Weissman RH: Band lineup of pseudomorphic GaAs1-xSbx quantum-well structures with GaAs, GaAsP, and InGaP barriers grown by metal organic chemical vapor deposition. J. Appl. Phys. 2006, 100:093703.
15. Yu PY, Cardona M: Fundamentals of Semiconductors. 3rd edition. Berlin: Springer; 2005.
16. Vurgaftman I, Meyer JR, Ram-Mohan LR: Band parameters for III-V compound semiconductors and their alloys. J Appl Phys 2001, 89:5815.
17. Penn C, Schaffler F, Bauer G, Glutsch S: Application of numerical exciton-wavefunction calculations to the question of band alignment in Si/SiGe quantum wells. Phys Rev B 1999, 59:13314.
18. Fukatsu S, Usami N, Shiraki Y: Luminescence from Si1-xGex/Si quantum wells grown by Si molecular-beam epitaxy. J Vac Sci Technol B 1993, 11:895.