Band lineup of pseudomorphic GaAs 1-xSb x quantum-well structures with GaAs, GaAsP, and InGaP barriers grown by metal organic chemical vapor deposition

Journal of Applied Physics

Volumn 100, Issue 9, 2006, Pages

  Noh, M S ^a,b   Ryou, J H ^a   Dupuis, R D ^a,c,d   Chang, Y L ^e   Weissman, R H ^e  

^a The University of Texas at Austin   (United States)

^b LG Electronics Inc   (South Korea)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^e AGILENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND LINEUPS; BARRIER COMPOSITIONS; BARRIER MATERIALS; HETEROINTERFACES;

BAND STRUCTURE; CATHODOLUMINESCENCE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33751095892     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2363237     Document Type: Article

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