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Journal of Applied Physics

Volumn 112, Issue 11, 2012, Pages

Improvement of (004) texturing by slow growth of Nd doped TiO2 films

(5) Ali, A a Yassitepe, E b Ruzybayev, I b Ismat Shah, S b Bhatti, A S a

a Department of Electrical Computer Engineering (Pakistan)

b UNIVERSITY OF DELAWARE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PERCENT; DOPANT CONCENTRATIONS; GLASS SUBSTRATES; GROWTH CONDITIONS; ND-DOPED; OXYGEN VACANCY CONCENTRATION; PHONON CONFINEMENT; PREFERENTIAL GROWTH; RED SHIFT; REDUCTION OF TI; SLOW GROWTH; SLOW GROWTH RATES; TIO; VALANCE STATE;

DEPOSITS; FILM GROWTH; MORPHOLOGY; NEODYMIUM ALLOYS; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; SUBSTRATES; TITANIUM DIOXIDE; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

NEODYMIUM;

EID: 84871206587 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4767361 Document Type: Article

Times cited : (25)

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