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Applied Physics Letters

Volumn 101, Issue 23, 2012, Pages

Current conduction and stability of CeO2/La2O 3 stacked gate dielectric

(6) Wong, Hei a,b Yang, B L a Dong, Shurong a Iwai, H c Kakushima, K c Ahmet, P c

a ZHEJIANG UNIVERSITY (China)

b CITY UNIVERSITY OF HONG KONG (Hong Kong)

c TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT CONDUCTION; HOLE CONDUCTION; HOLE INJECTION; INTERSTITIAL OXYGEN; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; NEGATIVE CHARGE; NEGATIVE GATE; OXYGEN ANION;

GATE DIELECTRICS; LANTHANUM OXIDES;

ELECTRON INJECTION;

EID: 84870867004 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4768943 Document Type: Article

Times cited : (13)

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