Transparent in-plane-gate junctionless oxide-based TFTs directly written by laser scribing

IEEE Electron Device Letters

Volumn 33, Issue 12, 2012, Pages 1723-1725

  Zhu, Liqiang ^a   Wu, Guodong ^a   Zhou, Jumei ^a   Zhang, Hongliang ^a   Wan, Qing ^a  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

Author keywords

In plane gate thin film transistors (TFTs); laser scribing

Indexed keywords

ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; INDIUM-ZINC-OXIDE FILMS; JUNCTIONLESS; LASER SCRIBING; LOGIC OPERATIONS; LOW COST FABRICATION; ROOM TEMPERATURE; SOURCE/DRAIN ELECTRODES; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS);

OXIDE FILMS; PHOTOLITHOGRAPHY; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

LASERS;

EID: 84870436595     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2219492     Document Type: Article

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