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Volumn 22, Issue 39, 2012, Pages 20896-20901

ZnO layers for opto-electronic applications from solution-based and low-temperature processing of an organometallic precursor

(6) Bao Foong, Thelese Ru a Singh, Samarendra Pratap a,c Sonar, Prashant a Ooi, Zi En a Chan, Khai Leok a Dodabalapur, Ananth a,b

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

b The University of Texas at Austin (United States)

c SHIV NADAR UNIVERSITY (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CONVERSION EFFICIENCY; HUMIDITY CONTROL; METALLIC FILMS; NANOSTRUCTURED MATERIALS; ORGANOMETALLICS; SEMICONDUCTOR GROWTH; SOLAR CELLS; TEMPERATURE; ZINC OXIDE;

ACTIVE MATERIAL; DIAGNOSTIC TOOLS; DIETHYLZINC PRECURSOR; DOPED ZNO; DOPING LEVELS; ELECTRON TRANSPORT LAYERS; FABRICATION PROCESS; FIELD-EFFECT; FLEXIBLE PLASTICS; INTRINSIC DOPING; KEY FEATURE; LOW TEMPERATURE PROCESSING; LOW TEMPERATURES; LOW-RESISTANCE CONTACTS; OPTOELECTRONIC APPLICATIONS; ORGANOMETALLIC PRECURSORS; POTENTIAL DROP; POWER CONVERSION EFFICIENCIES; PROCESSABILITY; SEMICONDUCTOR FILMS; SOLAR-CELL APPLICATIONS; STRAIGHT-FORWARD METHOD; TRANSPORT LAYERS; UNDOPED LAYERS; ZNO; ZNO FILMS; ZNO LAYERS;

SEMICONDUCTOR DOPING;

EID: 84870417087 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c2jm34656g Document Type: Article

Times cited : (20)

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