Study of surface and bulk electronic structure of II-VI semiconductor nanocrystals using Cu as a nanosensor

ACS Nano

Volumn 6, Issue 11, 2012, Pages 9751-9763

  Grandhi, G Krishnamurthy ^a   Tomar, Renu ^a   Viswanatha, Ranjani ^a  

^a JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

Author keywords

Cu doping; II VI semiconductors; nanocrystal band offset; photoluminescence; surface trap states

Indexed keywords

ATOMIC-LIKE STATE; BAND ALIGNMENTS; BAND EDGE; BAND OFFSETS; BULK ELECTRONIC STRUCTURES; CDSE NANOCRYSTALS; CU-DOPING; DECAY STUDIES; DOPING COPPER; EMISSION FEATURES; EXCITONIC EMISSION; HIGH DEMAND; II-VI SEMICONDUCTOR; INTERNAL STANDARDS; LIGAND MOLECULES; QUANTITATIVE MEASUREMENT; SEMICONDUCTOR NANOCRYSTALS; SURFACE ELECTRONIC STRUCTURES; SURFACE TRAP-STATES;

ALIGNMENT; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CHARGE TRANSFER; CONDUCTION BANDS; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); OLEIC ACID; PHOTOELECTRON SPECTROSCOPY; PHOTOLUMINESCENCE; QUANTUM YIELD; SEMICONDUCTOR DOPING; SURFACES;

NANOCRYSTALS;

COPPER; NANOMATERIAL;

ARTICLE; CHEMISTRY; CONDUCTOMETRY; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; EVALUATION; MATERIALS TESTING; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

CONDUCTOMETRY; COPPER; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTORS;

EID: 84870404022     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn304149s     Document Type: Article

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