Tuning radiative recombination in cu-doped nanocrystals via electrochemical control of surface trapping

Nano Letters

Volumn 12, Issue 8, 2012, Pages 4372-4379

  Brovelli, Sergio ^a,b   Galland, Christophe ^a   Viswanatha, Ranjani ^a,c   Klimov, Victor I ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

^c JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

Author keywords

copper doped nanocrystal; fluorescence line narrowing; Nanocrystal quantum dot; spectro electrochemistry; trapping; ZnSe CdSe core shell

Indexed keywords

BAND-EDGE EMISSIONS; COLLOIDAL NANOCRYSTALS; CORE/SHELL; CU-DOPED; DOPANT IONS; DOPED NANOCRYSTALS; ELECTROCHEMICAL CONTROL; ELECTROCHEMICAL POTENTIAL; ELECTRON SURFACE; ELECTRONIC PASSIVATION; EMISSION FEATURES; FLUORESCENCE LINE NARROWING; IMPURITY BANDS; NEGATIVE POTENTIAL; NON-RADIATIVE LOSS; PHOTOLUMINESCENCE INTENSITIES; PL EFFICIENCY; POSITIVE POTENTIAL; RADIATIVE RECOMBINATION; SURFACE TRAPPING; TRAPPING;

CHARGE TRAPPING; DOPING (ADDITIVES); ELECTROCHEMISTRY; NANOCRYSTALS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SOL-GELS;

COPPER;

EID: 84864686714     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl302182u     Document Type: Article

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