Ultrafast electron dynamics on the silicon surface excited by an intense femtosecond laser pulse

JETP Letters

Volumn 96, Issue 6, 2012, Pages 375-379

  Ionin, A A ^a   Kudryashov, S I ^a   Makarov, S V ^a   Saltuganov, P N ^a   Seleznev, L V ^a   Sinitsyn, D V ^a   Sharipov, A R ^a  

^a LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84870354950     PISSN: 00213640     EISSN: 10906487     Source Type: Journal    
DOI: 10.1134/S002136401218004X     Document Type: Article

References (29)

1. K. Seibert, G. C. Cho, W. Kutt, et al., Phys. Rev. B 42, 2842 (1990).
2. K. Sokolowski-Tinten and D. von der Linde, Phys. Rev. B 61, 2643 (2000); T. Y. Choi and C. P. Grigoropoulos, J. Appl. Phys. 92, 4918 (2002).
3. E. J. Yoffa, Phys. Rev. B 21, 2415 (1980).
4. A. Oschlies, R. W. Godby, and R. J. Needs, Phys. Rev. B 45, 13741 (1992).
5. C. D. Spataru, L. X. Benedict, and S. G. Louie, Phys. Rev. B 69, 205204 (2004).
6. T. Ichibayashi, S. Tanaka, J. Kanasaki, and K. Tanimura, Phys. Rev. B 84, 235210 (2011).
7. S. I. Kudryashov, M. Kandyla, C. A. D. Roeser, and E. Mazur, Phys. Rev. B 75, 085207 (2007).
8. M. Hase, M. Katsuragawa, A. M. Constantinescu, and H. Petek, Nature Photon. 6, 243 (2012).
9. E. N. Glezer, Y. Siegal, L. Huang, and E. Mazur, Phys. Rev. B 51, 6959 (1995).
10. S. I. Kudryashov, Proc. SPIE 5448, 1171 (2004).
11. T. Apostolova, A. A. Ionin, S. I. Kudryashov, et al., Opt. Eng. 51, 121808 (2012).
12. J. M. Liu, R. Yen, H. Kurz, and N. Bloembergen, Appl. Phys. Lett. 39, 755 (1981).
13. C. T. Hebeisen, G. Sciaini, M. Harb, et al., Phys. Rev. B 78, 081403R (2008); H. Park and J. M. Zuo, Appl. Phys. Lett. 94, 251103 (2009).
14. N. M. Bulgakova, R. Stoian, A. Rosenfeld, et al., Phys. Rev. B 69, 054102 (2004).
15. C. V. Shank, R. Yen, and C. Hirlimann, Phys. Rev. Lett. 50, 454 (1983).
16. D. Hulin, M. Combescot, J. Bok, et al., Phys. Rev. Lett. 52, 1998 (1984).
17. S. I. Ashitkov, A. V. Ovchinnikov, and M. B. Agranat, JETP Lett. 79, 529 (2004); M. B. Agranat, S. I. Ashitkov, S. I. Anisimov, et al., Appl. Phys. A 94, 879 (2009).
18. A. Couairon and A. Mysyrowicz, Phys. Rep. 441, 47 (2007).
19. Handbook of Optical Constants of Solids, Ed. by E. D. Palik (Academic, Orlando, 1998).
20. L. Bruschi, M. Santini, and G. Torzo, J. Phys. B: At. Mol. Phys. 17, 1137 (1984).
21. W. Wendelen, D. Autrique, and A. Bogaerts, Appl. Phys. Lett. 96, 051121 (2010).
22. S. I. Kudryashov and V. I. Emel'yanov, JETP Lett. 73, 228 (2001); S. I. Kudryashov and V. I. Emel'yanov, J. Exp. Theor. Phys. 94, 94 (2002).
23. A. Dargys and J. Kundrotas, Handbook on Physical Properties of Ge, Si, GaAs and InP (Science and Encyclopedia Publ., Vilnius, 1994).
24. A. J. Sabbah and D. M. Riffe, Phys. Rev. B 66, 165217 (2002).
25. P. Yu and M. Cardona, Fundamentals of Semiconductor Physics (Springer, New York, 1996; Fizmatlit, Moscow, 2002).
26. J.-Y. Bigot, M. T. Portella, R. W. Schoenlein, et al., Phys. Rev. Lett. 67, 636 (1991).
27. D. H. Reitze, T. R. Zhang, Wm. M. Wood, and M. C. Downer, J. Opt. Soc. Am. B 7, 84 (1990); J. Bonse, Appl. Phys. A 84, 63 (2006); D. J. Hwang, C. P. Grigoropoulos, and T. Y. Choi, J. Appl. Phys. 99, 083101 (2006).
28. Physical Values, Handbook, Ed. by I. S. Grigor'ev and E. Z. Meilikhov (Energoatomizdat, Moscow, 1991) [in Russian].
29. W. G. Roeterdink, L. B. F. Juurlink, O. P. H. Vaughan, et al., Appl. Phys. Lett. 82, 4190 (2003); H. Dachraoui and W. Husinsky, Phys. Rev. Lett. 97, 107601 (2006).