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Volumn 49, Issue 6, 2012, Pages 696-701

Elemental characterization of the Avogadro silicon crystal WASO 04 by neutron activation analysis

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL METHOD; AVOGADRO CONSTANT; DETECTION LIMITS; HIGH PURITY; MASS FRACTION; NATURAL SILICON; NEUTRON ACTIVATION; SI CRYSTALS; SILICON CRYSTAL;

EID: 84870267210     PISSN: 00261394     EISSN: 16817575     Source Type: Journal    
DOI: 10.1088/0026-1394/49/6/696     Document Type: Article
Times cited : (15)

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    • Instrumental neutron activation analysis of semiconductor grade silicon
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    • Fujinaga K and Kudo K 1979 Instrumental neutron activation analysis of semiconductor grade silicon J. Radioanal. Chem. 52 411-9
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  • 8
    • 5844327256 scopus 로고
    • Activation analysis: The most important method for control of purity of semiconductor silicon
    • 10.1007/BF02041360 0236-5731
    • Bottger M L, Niese S, Birnstein D and Helbig W 1989 Activation analysis: the most important method for control of purity of semiconductor silicon J. Radioanal. Nucl. Chem. 130 417-23
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    • Park K S, Kim N B, Woo H J, Kim D K, Kim J K and Choi H W 1991 Determination of impurities in semiconductor grade silicon by instrumental neutron activation analysis J. Radioanal. Nucl. Chem. 151 373-8
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    • Park, K.S.1    Kim, N.B.2    Woo, H.J.3    Kim, D.K.4    Kim, J.K.5    Choi, H.W.6
  • 10
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    • Neutron activation analysis of semiconductor silicon
    • 10.1007/BF02520181 0134-0719
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  • 11
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    • Application of instrumental neutron activation analysis in Czochralski silicon crystal growth
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.