Memristive behavior of ZnO/Au film investigated by a TiN CAFM Tip and its model based on the experiments

IEEE Transactions on Nanotechnology

Volumn 11, Issue 6, 2012, Pages 1135-1139

  Wang, Wenhong ^a   Dong, Ruixin ^a   Yan, Xunling ^a   Yang, Bing ^a   An, Xueli ^a  

^a LIAOCHENG UNIVERSITY   (China)

Author keywords

An idealized model; interface barrier; memristive behavior; ZnO Au film

Indexed keywords

CONDUCTIVE-ATOMIC FORCE; DEVICE STRUCTURES; HIGH-RESISTANCE STATE; IDEALIZED MODELS; INTERFACE BARRIER; LOW-RESISTANCE STATE; MEMRISTIVE BEHAVIOR; METAL ATOMS; MODEL-BASED OPC; NANO SCALE; RESISTANCE RATIO; RESISTIVE SWITCHING BEHAVIORS; SPECIAL POINTS; SWITCHING VOLTAGES; ZNO; ZNO FILMS;

EXPERIMENTS; MOLECULAR BEAM EPITAXY; TITANIUM NITRIDE;

INTERFACES (MATERIALS);

EID: 84870265502     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2012.2214486     Document Type: Article

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