Interface and transport properties of GaN/graphene junction in GaN-based LEDs

Journal of Physics D: Applied Physics

Volumn 45, Issue 50, 2012, Pages

  Wang, Liancheng ^a   Zhang, Yiyun ^a   Li, Xiao ^b   Liu, Zhiqiang ^a   Guo, Enqing ^a   Yi, Xiaoyan ^a   Wang, Junxi ^a   Zhu, Hongwei ^b   Wang, Guohong ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCULAR TRANSMISSION LINE; GAN BASED LED; METAL ATOMS; N-POLAR; P-TYPE; UNIFORM INTERFACE;

GALLIUM ALLOYS; GALLIUM NITRIDE;

TRANSPORT PROPERTIES;

EID: 84870213161     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/50/505102     Document Type: Article

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