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Volumn 101, Issue 21, 2012, Pages

Dynamic nuclear spin polarization in an all-semiconductor spin injection device with (Ga,Mn)As/n-GaAs spin Esaki diode

(11) Shiogai, J a,b,c Ciorga, M b Utz, M b Schuh, D b Arakawa, T c Kohda, M a,d Kobayashi, K c Ono, T c Wegscheider, W b,e Weiss, D b Nitta, J a

a TOHOKU UNIVERSITY (Japan)

b UNIVERSITY OF REGENSBURG (Germany)

c KYOTO UNIVERSITY (Japan)

d JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

e ETH ZURICH (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL SPIN INJECTION; ELECTRON SPINS; ESAKI DIODE; HYPERFINE INTERACTIONS; INJECTED ELECTRONS; NONLOCAL; NUCLEAR FIELDS; NUCLEAR SPINS; NUCLEAR-SPIN POLARIZATION; SPIN INJECTION DEVICES; TIME EVOLUTIONS; VOLTAGE SIGNALS; ZERO MAGNETIC FIELDS;

ELECTROSPINNING; GALLIUM ARSENIDE; MAGNETIC MOMENTS; MANGANESE; SEMICONDUCTING GALLIUM; SPIN POLARIZATION; TUNNEL DIODES;

SPIN DYNAMICS;

EID: 84869987182 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4767339 Document Type: Article

Times cited : (25)

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