Photoelectrochemical performance of Cu-Zn-In-S film grown using one-step electrodeposition

Electrochimica Acta

Volumn 87, Issue , 2013, Pages 53-62

  Cheng, Kong Wei ^a   Lee, Wei Che ^a   Fan, Miao Syuan ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Copper zinc indium sulfide; Electrodeposition; Photoelectrochemical; Thin film

Indexed keywords

AG/AGCL; APPLIED BIAS; COPPER-ZINC-INDIUM-SULFIDE; DIRECT BAND GAP; FLAT BAND; GLASS SUBSTRATES; MOLAR RATIO; MOTT-SCHOTTKY; N-TYPE SEMICONDUCTORS; PHOTOELECTROCHEMICAL APPLICATIONS; PHOTOELECTROCHEMICAL PERFORMANCE; PHOTOELECTROCHEMICALS; REFERENCE ELECTRODES; REFLECTANCE SPECTRUM; SEMICONDUCTOR FILMS; SURFACE PROFILE MEASUREMENTS;

COPPER; ELECTRIC PROPERTIES; ELECTROCHEMISTRY; ELECTRODEPOSITION; FLUORINE; INDIUM; INDIUM SULFIDE; OXIDE FILMS; SEMICONDUCTING INDIUM; SODIUM; SUBSTRATES; THIN FILMS; TIN; X RAY DIFFRACTION; ZINC;

ZINC SULFIDE;

EID: 84869884048     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2012.09.005     Document Type: Article

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