Photoelectrochemical properties of AgInS2 thin films prepared using electrodeposition

Solar Energy Materials and Solar Cells

Volumn 95, Issue 2, 2011, Pages 453-461

  Wang, Chih Hao ^a   Cheng, Kong Wei ^b   Tseng, Chung Jen ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

AgInS2; Electrodeposition; Photocurrent; Thin film

Indexed keywords

AG/AGCL; AGINS2; APPLIED BIAS; CARRIER DENSITY; COATED GLASS SUBSTRATES; DIRECT BAND GAP; FLAT BAND; FLUORINE DOPED TIN OXIDE; HIGH QUALITY; INDIRECT BAND GAP; MOLAR RATIO; MOTT-SCHOTTKY; NORMAL HYDROGEN ELECTRODES; ONE-STEP ELECTRODEPOSITIONS; OPEN CIRCUIT POTENTIAL MEASUREMENTS; PHOTOCURRENT DENSITY; PHOTOELECTROCHEMICAL PROPERTIES; PHOTOELECTROCHEMICALS;

DIFFRACTION; ENERGY GAP; FLUORINE; GLASS; NANOCOMPOSITES; PHOTOCURRENTS; SODIUM; SUBSTRATES; THIN FILMS; TIN; TIN OXIDES; VAPOR DEPOSITION; X RAY DIFFRACTION;

ELECTRODEPOSITION;

EID: 78650689873     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.08.030     Document Type: Article

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