19% efficiency heterojunction solar cells on Cz wafers from non-blended Upgraded Metallurgical Silicon

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 3234-3237

  Einhaus, R ^a   Kraiem, J ^a   Degoulange, J ^a   Nichiporuk, O ^a   Forster, M ^a   Papet, P ^b   Andrault, Y ^b   Grosset Bourbange, D ^c   Cocco, F ^c  

^a APOLLON SOLAR   (France)

^b Rau Switzerland AG   (Switzerland)

^c FerroPem   (France)

Author keywords

Cz; high efficiency cells; n type; UMG

Indexed keywords

ANALYSIS TECHNIQUES; BORON-OXYGEN COMPLEX; CZ; CZ SILICON; HETEROJUNCTION SOLAR CELLS; HIGH-EFFICIENCY CELLS; ICP-OES; LIFETIME DEGRADATION; LIGHT-INDUCED DEGRADATION; LOW-COST SOLAR CELLS; N TYPE SILICON; N-TYPE; P-TYPE SILICON; PHOSPHORUS CONCENTRATION; RESIDUAL METALS; STANDARD TESTING; UMG;

BORON; CONVERSION EFFICIENCY; EFFICIENCY; HETEROJUNCTIONS; INGOTS; METALLURGY; NANOSTRUCTURED MATERIALS; PHOSPHORUS; PURIFICATION; SILICON; SOLAR CELLS;

SILICON WAFERS;

EID: 84869478346     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6318266     Document Type: Conference Paper

References (10)

1. Y. Kishida et al.: "Production of Compensation free SOG Silicon Feedstock by Metallurgical Refinement,", Proceedings of the 37th IEEE Photovoltaic Specialists Conference, Seattle, USA, 2011
2. T. Margaria et al.: "UMG Silicon from the PHOTOSIL project - a status overview in 2011 on the way towards industrial production,", Proceedings of the 26th EU Photovoltaic Specialists Conference, Hamburg, Germany 2011, pp. 1806-1809.
3. R. Einhaus et al.: "Purifying UMG Silicon at the French PHOTOSIL project,", Photovoltaics International, Volume 9, 2010 pp. 60-65.
4. J. E. Cotter et al.: "P-type vs n-type Silicon wafers Prospects for High Efficiency Commercial Silicon Solar Cells,", IEEE Transactions on Electron Devices, Vol 53, No 8, 2006, pp. 1893-1901.
5. A. Cuevas et al.: "Millisecond minority carrier lifetimes in n-type multicrystalline silicon,", Applied Physics Letters, Volume 81, Number 26, 2002, pp. 4952-4954.
6. S. Glunz et al.: "Minority carrier lifetime degradation in boron-doped Czochralski Silicon,", Journal of Applied Physics, Volume 90, Number 5, 2001, pp. 2397-2404.
7. G. Citarella et al.: "Silicon Heterojunction Solar Cell Development with the primeline HJT Platform at Roth & Rau,", Proceedings of the 26th EU Photovoltaic Specialists Conference, Hamburg, Germany 2011, pp. 865-871.
8. D. Bätzner et al.: "Characterisation of over 21% efficient Silicon Heterojunction cells developed at Roth & Rau Switzerland,", Proceedings of the 26th EU Photovoltaic Specialists Conference, Hamburg, Germany 2011, pp. 1073-1075.
9. F. E. Rougieux, et al: "Influence of net doping, excess carrier density and annealing on the oxygen related defect density in compensated n-type Silicon,", Journal of Applied Physics, 110, 063708 (2012).
10. M. Forster et al.: "Ga co-doping in Cz-grown Silicon ingots to overcome limitations of B and P compensated Silicon feedstock for PV applications,", Physica Status Solidi, C8 (2011), No. 3, pp. 678-681.