Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

  Rougieux, F E ^a   Lim, B ^b   Schmidt, J ^b   Forster, M ^a,c,d   MacDonald, D ^a   Cuevas, A ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^c APOLLON SOLAR   (France)

^d INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-OXYGEN; BORON-OXYGEN COMPLEX; DOPANT CONCENTRATIONS; EXCESS CARRIERS; EXPERIMENTAL DATA; MINORITY CARRIER CONCENTRATION; N TYPE SILICON; OXYGEN DIMERS;

BORON; BORON COMPOUNDS; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); DEFECTS; OXYGEN;

DEFECT DENSITY;

EID: 80053532616     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3633492     Document Type: Article

References (23)

1. T. Schutz-Kuchly, J. Veirman, S. Dubois, and D. R. Heslinga, Appl. Phys. Lett. 96, 093505 (2010). 10.1063/1.3334724
2. B. Lim, F. Rougieux, D. Macdonald, K. Bothe, and J. Schmidt, J. Appl. Phys. 108, 103722 (2010). 10.1063/1.3511741
3. T. Schutz-Kuchly, S. B. Dubois, J. Veirman, Y. Veschetti, D. Heslinga, and O. Palais, Phys. Stat. Sol. A 208, 572 (2010). 10.1002/pssa.201000218
4. J. Geilker, W. Kwapil, and S. Rein, J. Appl. Phys. 109, 053718 (2011). 10.1063/1.3552302
5. J. Schmidt and K. Bothe, Phys. Rev. B 69, 024107 (2004). 10.1103/PhysRevB.69.024107
6. S. Rein and S. W. Glunz, Appl. Phys. Lett. 82, 1054 (2003). 10.1063/1.1544431
7. K. Bothe, J. Schmidt, and R. Hezel, in Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE, IEEE, New York (2002), p. 194.
8. S. W. Glunz, S. Rein, J. Y. Lee, and W. Warta, J. Appl. Phys. 90, 2397 (2001). 10.1063/1.1389076
9. V. V. Voronkov and R. Falster, J. Appl. Phys. 107, 053509 (2010). 10.1063/1.3309869
10. R. A. Sinton and A. Cuevas, Appl. Phys. Lett. 69, 2510-2512 (1996). 10.1063/1.117723
11. F. E. Rougieux, D. Macdonald, and A. Cuevas, Transport properties of p-type compensated silicon at room temperature., Prog. Photovolt: Res. Appl. (in press).
12. F. Dannhuser, Solid-State Electron. 15, 1371 (1972). 10.1016/0038- 1101(72)90131-1
13. J. Krausse, Solid-State Electron. 15, 1377 (1972). 10.1016/0038-1101(72) 90132-3
14. K. Bothe and J. Schmidt, J. Appl. Phys. 99, 013701 (2006). 10.1063/1.2140584
15. J. Adey, R. Jones, D. W. Palmer, P. R. Briddon, and S. Oberg, Phys. Rev. Lett. 93, 055504 (2004). 10.1103/PhysRevLett.93.055504
16. L. I. Murin, T. Hallberg, V. P. Markevich, and J. L. Lindstrom, Phys. Rev. Lett. 80, 93 (1998). 10.1103/PhysRevLett.80.93
17. K. Bothe, R. Sinton, and J. Schmidt, Prog. Photovolt: Res. Appl. 13, 287 (2005). 10.1002/pip.v13:4
18. R. Kopecek, J. Arumughan, and K. Peter, in Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain (WIP-Renewable Energies, Munich, Germany, 2008).
19. D. Macdonald, A. Liu, A. Cuevas, B. Lim, and J. Schmidt, Phys. Stat. Sol. A 208 (3), 559 (2011). 10.1002/pssa.201000146
20. D. Macdonald, F. Rougieux, A. Cuevas, B. Lim, J. Schmidt, M. Di Sabatino, and L. J. Geerligs, J. Appl. Phys. 105, 093704 (2009). 10.1063/1.3121208
21. L. I. Murin, E. A. Tolkacheva, V. P. Markevich, A. R. Peaker, B. Hamilton, E. Monakhov, B. G. Svensson, J. L. Lindstrom, P. Santos, J. Coutinho, and A. Carvalho, Appl. Phys. Lett. 98, 182101 (2011). 10.1063/1.3584138
22. B. B. Paudyal, K. R. McIntosh, D. H. Macdonald, B. S. Richards, and R. A. Sinton, Prog. Photovolt: Res. Appl. 16, 609 (2008). 10.1002/pip.839
23. H. Hashigami, Y. Itakura, and T. Saitoh, J. Appl. Phys. 93, 4240 (2003). 10.1063/1.1559430