Thin film a-Si/c-Si1-xGex/c-Si heterojunction solar cells with Ge content up to 56%

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 5-8

  Hadi, Sabina Abdul ^a   Hashemi, Pouya ^b   Dilello, Nicole ^b   Nayfeh, Ammar ^a   Hoyt, Judy L ^b  

^a KHALIFA UNIVERSITY   (United Arab Emirates)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

carrier lifetime; HIT solar cells; photovoltaic cells; SiGe thin film; silicon

Indexed keywords

ATOMIC PERCENT; GE CONCENTRATIONS; GE CONTENT; HETEROJUNCTION SOLAR CELLS; INTERFACE VELOCITY; JUNCTION LAYERS; PHYSICS-BASED; QUANTUM EFFICIENCY MEASUREMENTS; SIGE LAYERS; SIGE THIN FILM; SPECTRAL RESPONSE; TCAD SIMULATION;

CARRIER LIFETIME; GERMANIUM; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC CELLS; SILICON ALLOYS; SOLAR CELLS; THIN FILMS;

SILICON;

EID: 84869445283     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6317556     Document Type: Conference Paper

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