A-Si/c-Si1-xGex/c-Si heterojunction solar cells

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2011, Pages 191-194

  Hadi, Sabina Abdul ^a   Nayfeh, Ammar ^a   Hashemi, Pouya ^b   Hoyt, Judy ^b  

^a KHALIFA UNIVERSITY   (United Arab Emirates)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Efficiency; Heterojunction; Lifetime; SiGe; Solar; thin film

Indexed keywords

BAND GAPS; GE CONTENT; GE FRACTION; HETEROJUNCTION SOLAR CELLS; INTERFACIAL QUALITIES; LIFETIME; MATERIAL QUALITY; MINORITY CARRIER LIFETIMES; MODELING AND SIMULATION; OUTPUT CURRENT; SI-BASED SOLAR CELLS; SIGE; SOLAR; THIN FILM SOLAR CELLS; THIN LAYERS;

COMPUTER SIMULATION; GERMANIUM; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SILICON; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80055006724     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2011.6035083     Document Type: Conference Paper

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