The shockley-queisser limit and practical limits of nanostructured photovoltaics

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 1663-1668

  McCarthy, R F ^a,b   Hillhouse, H W ^b  

^a PURDUE UNIVERSITY   (United States)

^b UNIVERSITY OF WASHINGTON   (United States)

Author keywords

Nanostructured Photovoltaics; Photovoltaic Simulation

Indexed keywords

BULK LIFETIME; BULK MATERIALS; COLLECTION EFFICIENCY; CONTINUITY EQUATIONS; DETAILED BALANCE; DOPANT CONCENTRATIONS; ELECTRIC FIELD STRENGTH; INTEGRAL FORM; LENGTH SCALE; MODEL-BASED OPC; MULTIPLE EXCITON; NANO-STRUCTURED; NANO-STRUCTURING; P-N JUNCTION; PHOTOVOLTAIC; PHOTOVOLTAICS; SHOCKLEY-READ-HALL; SURFACE RECOMBINATION VELOCITIES; THEORETICAL LIMITS; TRANSIT TIME;

ELECTRIC FIELDS; REFRACTIVE INDEX;

NANOSTRUCTURES;

EID: 84869417056     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6317915     Document Type: Conference Paper

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