Excellent passivation and low reflectivity Al2O3 /TiO2 bilayer coatings for n-wafer silicon solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 1066-1068

  Lee, Benjamin G ^a   Skarp, Jarmo ^b   Malinen, Ville ^b   Li, Shuo ^b   Choi, Sukgeun ^a   Branz, Howard M ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Beneq Oy   (Finland)

Author keywords

anti reflection; atomic layer deposition; minority carrier lifetime; n wafer silicon; passivation

Indexed keywords

ABSOLUTE REFLECTIVITY; ANTI-REFLECTION; AR COATINGS; BILAYER COATINGS; INTERDIGITATED BACK CONTACTS; MINORITY CARRIER LIFETIMES; P-TYPE; P-TYPE SILICON; SI SOLAR CELLS; TIO;

ATOMIC LAYER DEPOSITION; COATINGS; PASSIVATION; REFLECTION; SILICON; SILICON NITRIDE; SILICON SOLAR CELLS; TITANIUM DIOXIDE;

SILICON WAFERS;

EID: 84869400108     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6317787     Document Type: Conference Paper

References (6)

1. 3," Appl. Phys. Lett. 91, 112107 (2007).
2. P. Saint-Cast et al., "Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide," Appl. Phys. Lett. 95, 151502 (2009).
3. G. Dingemans et al., "Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition," Phys. Status Solidi RRL 4, 10-12 (2010).
4. F. Werner et al., "Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide," Appl. Phys. Lett. 97, 162103 (2010).
5. 3-passivated boron emitters," Appl. Phys. Lett. 92, 253504 (2008).
6. R.A. Sinton and A. Cuevas, "Contactless determination of current-voltage characteristics and minority carrier lifetimes in semiconductors from quasi steady state photoconductance data," Appl. Phys. Lett. 69, 2510 (1996).