An ultra-low-cost high-performance bluetooth SoC in 0.11-μm CMOS

IEEE Journal of Solid-State Circuits

Volumn 47, Issue 11, 2012, Pages 2665-2677

  Tan, Sam Chun Geik ^a   Song, Fei ^a   Zheng, Renliang ^a   Cui, Jiqing ^a   Yao, Guoqin ^a   Tang, Litian ^a   Yang, Yuejin ^a   Guo, Dandan ^a   Tanzil, Alexander ^a   Cao, Junmin ^a   Kong, Ming ^a   Wong, Kiantiong ^a   Chew, Soong Lin ^a   Heng, Chee Lee ^a   Shanaa, Osama ^a   Dehng, Guang Kaai ^b  

^a MediaTek Singapore Ltd   (Singapore)

^b MEDIATEK INC   (Taiwan)

Author keywords

Bluetooth; CMOS integrated circuits; radio receivers; radio transmitters; transceivers

Indexed keywords

BLUETOOTH SOC; DC CURRENT; DIE SIZE; DIGITAL CMOS TECHNOLOGY; HIGH OUTPUT POWER; HIGHLY INTEGRATED; OUT-OF-BAND; OUTPUT POWER; RECEIVER SENSITIVITY; SPURIOUS EMISSIONS; T/R SWITCH;

BLUETOOTH; CMOS INTEGRATED CIRCUITS; RADIO RECEIVERS; RADIO TRANSMITTERS;

TRANSCEIVERS;

EID: 84869233268     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2012.2211672     Document Type: Article

References (11)

1. Bluetooth Core Specification v2.1+ED. Bluetooth SIG, Jul. 2007.
2. K. Agawa et al., "A 90 dBm sensitivity 0.13 m CMOS Bluetooth transceiver operating in wide temperature range," in Proc. IEEE CICC, Sep. 16-19, 2007, pp. 655-658. (Pubitemid 351277069)
3. C.-H. Hsiao et al., "Analysis and improvement of direct-converison transmitter pulling effects in constant envelope modulation systems," IEEE Tran. Microw. Theory Tech., vol. 58, no. 12, pp. 4137-4146, Dec. 2010.
4. B. Marholev et al., "A single chip Bluetooth EDR device in 0.13 m CMOS," in IEEE ISSCC Dig. Tech. Papers, Feb. 2007, pp. 558-559.
5. D. Weber et al., "A single chip CMOS radio SoC for v2.1 Bluetooth applications," in IEEE ISSCC Dig. Tech. Papers, Feb. 2008, pp. 364-365.
6. C. P. Lee et al., "A multistandard, multiband SoC with integrated BT, FM, WLAN radios and integrated power amplifier," in IEEE ISSCC Dig. Tech. Papers, Feb. 2010, pp. 454-455.
7. C.-T. Fu et al., "A 2.5 GHz 32 nm 0.35 mm2 3.5 dB NF 5 dBm P1dB fully differential CMOS push-pull LNA with integrated 34 dBm T/R switch and ESD protection," in IEEE ISSCC Dig. Tech. Papers, Feb. 2011, pp. 56-58.
8. D. Kaczman et al., "A single-chip 10-Band WCDMA/HSDPA 4-band GSM/EDGE SAW-less CMOS receiver with DigRF 3G interface and 90 dBm IIP2," IEEE J. Solid-State Circuits, vol. 44, no. 3, pp. 718-739, Mar. 2009.
9. S. C. Cripps, RF Power Amplifiers for Wireless Communications, 2nd ed. Norwood, MA: Artech House, 2006.
10. A. Poon et al., "Reduction of inductive crosstalk using quadrupole inductors," IEEE J. Solid-State Circuits, vol. 44, no. 6, pp. 1756-1764, Jun. 2009.
11. J. Bhattacharjee et al., "A 5.8 GHz fully integrated low power low phase noise CMOS LC VCO for WLAN applications," in IEEE MTT-S Int. Microw. Symp. Dig., Aug. 2002, pp. 585-588. (Pubitemid 34806529)