A multistandard, multiband SoC with integrated BT, FM, WLAN radios and integrated power amplifier

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 53, Issue , 2010, Pages 454-455

  Lee, Chungyeol Paul ^a   Behzad, Arya ^a   Marholev, Bojko ^a   Magoon, Vikram ^a   Bhatti, Iqbal ^a   Li, Dandan ^a   Bothra, Subhas ^a   Afsahi, Ali ^a   Ojo, Dayo ^a   Roufoogaran, Rozi ^a   Li, Tom ^a   Chang, Yuyu ^a   Rao, Kishore Rama ^a   Au, Stephen ^a   Seetharam, Prasad ^a   Carter, Keith ^a   Rael, Jacob ^a   Macintosh, Malcolm ^a   Lee, Bobby ^a   Rofougaran, Maryam ^a   Rofougaran, Reza ^a   Hadji Abdolhamid, Amir ^a   Nariman, Mohammad ^a   Khorram, Shahla ^a   Anand, Seema ^a   Chien, Ed ^a   Wu, Steve ^a   Barrett, Carol ^a   Zhang, Lijun ^a   Zolfaghari, Alireza ^a   Darabi, Hooman ^a   Sarfaraz, Ali ^a   Ibrahim, Brima ^a   Gonikberg, Mark ^a   Forbes, Marcellus ^a   Fraser, Colin ^a   Gutierrez, Luis ^a   Gonikberg, Yury ^a   Hafizi, Madjid ^b   Mak, Siukai ^a   Castaneda, Jesse ^a   Kim, Kimmer ^a   Liu, Zhenhua ^a   Bouras, Stamatis ^a   Chien, Kevin ^a   Chandrasekhar, Vinay ^a   Chang, Paul ^a   Li, Edwin ^a   Zhao, Zhimin ^a   more..

^a BROADCOM CORPORATION   (United States)

^b QUALCOMM INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

802.11 A/B/G; BAND GAPS; DIE SIZE; I/O COUNT; INTEGRATED POWER AMPLIFIERS; MULTI-STANDARD; MULTIBAND; POWER MANAGEMENT UNIT;

CRYSTAL OSCILLATORS; ENERGY MANAGEMENT; MICROPROCESSOR CHIPS; MOBILE DEVICES; POWER AMPLIFIERS;

DIES;

EID: 77952200517     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2010.5433962     Document Type: Conference Paper

References (5)

1. A. Afsahi, et al., "A Low-Power Single-Weight-Combiner 802.11abg SoC in 0.13um CMOS for Embedded Applications Utilizing An Area and Power Efficient Cartesian Phase Shifter and Mixer Circuit", IEEE J. Solid-State Circuits, vol. 43, no 5, pp. 1101-1118. May 2008.
2. W. Zhuo, et al., "A Capacitor Cross-Coupled Common-Gate Low-Noise Amplifier", IEEE Trans. Circuits and Systems, vol. 52, no 12, pp. 875-879. Dec. 2005.
3. A. Afsahi, et. al., "Fully Integrated Dual-Band Power Amplifiers with on-chip Baluns in 65nm CMOS for an 802.11n MIMO WLAN SoC", IEEE Radio Frequency Integrated Circuits Symp., pp. 365-368, 2009.
4. A. Berny, et al., "A 1.8-GHz LC VCO With 1.3-GHz Tuning Range and Digital Amplitude Calibration", IEEE J. Solid-State Circuits, vol. 40, no 4, pp. 909-917, 2005.
5. B. Marholev, et al., "A Single-Chip Bluetooth EDR Device in 0.13um CMOS", ISSCC Dig. Tech. Papers, pp. 558-559, 2007.