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Volumn 152, Issue 22, 2012, Pages 2027-2030
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Fermi level shift in topological insulator-silicon heterostructures
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Author keywords
A. Topological insulator; C. Heterostructures; D. Work function; E. Kelvin probe force microscopy
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Indexed keywords
CHARGE EXCHANGES;
HIGH QUALITY;
KELVIN PROBE FORCE MICROSCOPY;
NANOPLATES;
P-TYPE SILICON;
QUANTITATIVE RESULT;
SILICON SUBSTRATES;
TOPOLOGICAL INSULATORS;
ULTRA-THIN;
VAPOR PHASE DEPOSITION;
CHARGE TRANSFER;
ELECTRONIC PROPERTIES;
FERMI LEVEL;
INTERFACES (MATERIALS);
NANOSTRUCTURES;
PROBES;
SILICON;
WORK FUNCTION;
ELECTRIC INSULATORS;
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EID: 84869080339
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/j.ssc.2012.08.018 Document Type: Article |
Times cited : (8)
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References (29)
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