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Volumn 152, Issue 22, 2012, Pages 2027-2030

Fermi level shift in topological insulator-silicon heterostructures

Author keywords

A. Topological insulator; C. Heterostructures; D. Work function; E. Kelvin probe force microscopy

Indexed keywords

CHARGE EXCHANGES; HIGH QUALITY; KELVIN PROBE FORCE MICROSCOPY; NANOPLATES; P-TYPE SILICON; QUANTITATIVE RESULT; SILICON SUBSTRATES; TOPOLOGICAL INSULATORS; ULTRA-THIN; VAPOR PHASE DEPOSITION;

EID: 84869080339     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2012.08.018     Document Type: Article
Times cited : (8)

References (29)
  • 11
    • 42949106486 scopus 로고    scopus 로고
    • D. Hsieh Nature 452 2008 970
    • (2008) Nature , vol.452 , pp. 970
    • Hsieh, D.1
  • 13
  • 16
  • 26
  • 27
    • 77952907880 scopus 로고    scopus 로고
    • Y. Shi ACS Nano 4 2010 2689
    • (2010) ACS Nano , vol.4 , pp. 2689
    • Shi, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.