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Physical Review Letters

Volumn 109, Issue 20, 2012, Pages

Instabilities of the AA-stacked graphene bilayer

(4) Rakhmanov, A L a,b,c Rozhkov, A V a,b Sboychakov, A O a,b Nori, Franco a,d

a RIKEN (Japan)

b INSTITUTE FOR THEORETICAL AND APPLIED ELECTRODYNAMICS (Russian Federation)

c MOSCOW INSTITUTE OF PHYSICS AND TECHNOLOGY (Russian Federation)

d UNIVERSITY OF MICHIGAN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETICS; BI-LAYER; CONDUCTING BAND; REPULSION ENERGIES; ROOM TEMPERATURE; SPONTANEOUS SYMMETRY; STABLE ORDERS; TIGHT-BINDING CALCULATIONS;

ANTIFERROMAGNETISM;

GRAPHENE;

EID: 84869078458 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.109.206801 Document Type: Article

Times cited : (139)

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