Band topology and the quantum spin Hall effect in bilayer graphene

Solid State Communications

Volumn 151, Issue 16, 2011, Pages 1075-1083

  Prada, E ^a   San Jose, P ^b   Brey, L ^a   Fertig, H A ^c  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b INSTITUTO DE ESTRUCTURA DE LA MATERIA   (Spain)

^c INDIANA UNIVERSITY   (United States)

Author keywords

A. Graphene nanoribbons; A. Heterostructures; D. Electronic properties; D. Transport properties

Indexed keywords

BI-LAYER; BULK STATE; CHERN NUMBERS; D. ELECTRONIC PROPERTIES; D. TRANSPORT PROPERTIES; EDGE STATE; GAP OPENING; GRAPHENE NANORIBBONS; NON-TRIVIAL; NUMERICAL CALCULATION; QUANTUM SPIN HALL EFFECT; SINGLE LAYER; SPIN-ORBIT COUPLINGS; SURFACE SPECTRA; TWO LAYERS;

BAND STRUCTURE; ELECTRIC INSULATORS; ELECTRONIC PROPERTIES; HALL EFFECT; LANDFORMS; MONOLAYERS; TOPOLOGY; TRANSPORT PROPERTIES;

GRAPHENE;

EID: 79960045392     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2011.05.016     Document Type: Article

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