SCOPUS 정보 검색 플랫폼

Volumn 45, Issue 7, 2012, Pages 231-237

The effect of oxygen species on the ZnO TFT prepared by atmosphere pressure plasma jet

(7) Wu, Chien Hung a Chang, Kow Ming b,c Huang, Sung Hung b Deng, I Chung d Chi, Chia Wei b Wu, Chin Jyi e Chang, Chia Chiang e

a CHUNG HUA UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c I SHOU UNIVERSITY (Taiwan)

d TECHNOLOGY AND SCIENCE INSTITUTE OF NORTHERN TAIWAN (Taiwan)

e INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; ENERGY GAP; II-VI SEMICONDUCTORS; METALLIC FILMS; OPTICAL FILMS; OXIDE MINERALS; OXYGEN VACANCIES; PARTIAL PRESSURE; PLASMA JETS; PRESSURE EFFECTS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; ZINC OXIDE;

ATMOSPHERE PRESSURE; ATMOSPHERIC PRESSURE PLASMA JETS; BOTTOM GATE THIN FILM TRANSISTORS; FIELD-EFFECT MOBILITIES; OXYGEN PARTIAL PRESSURE; RANDOM ORIENTATIONS; SUBTHRESHOLD SWING; SWITCHING BEHAVIORS;

WIDE BAND GAP SEMICONDUCTORS;

EID: 84869013856 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.3701543 Document Type: Conference Paper

Times cited : (1)

References (7)

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