메뉴 건너뛰기




Volumn 109, Issue , 2013, Pages 26-32

Effect of porous Si and an etch-back process on the performance of a selective emitter solar cell

Author keywords

Etch back; Porous Si (PS); Quantum efficiency; Reflectivity; Selective emitter (SE) solar cell; Sheet resistance

Indexed keywords

ELECTRICAL PERFORMANCE; ETCH-BACK; INTERNAL QUANTUM EFFICIENCY; MINORITY CARRIER LIFETIMES; PEAK GAIN; POROUS SI; SELECTIVE EMITTERS; SHORT WAVELENGTHS; WET CHEMICALS;

EID: 84868686731     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.10.009     Document Type: Article
Times cited : (14)

References (11)
  • 1
    • 79953662043 scopus 로고    scopus 로고
    • Next Generation of Front Grid Metallization: LCP Selective Emitter Combined with Ni-Cu-Sn Direct Plating on Silicon
    • Hamburg, Germany
    • H.H. Kuehnlein, N. Koesterke, and G. Cimiotti, Next Generation of Front Grid Metallization: LCP Selective Emitter Combined with Ni-Cu-Sn Direct Plating on Silicon, 24th EUPVSEC, Hamburg, Germany, 2009, 1712-1714.
    • (2009) 24th EUPVSEC , pp. 1712-1714
    • Kuehnlein, H.H.1    Koesterke, N.2    Cimiotti, G.3
  • 2
    • 77951544433 scopus 로고    scopus 로고
    • 0.4% Absolute Efficiency Gain of Industrial Solar Cell by Laser Doped Selective Emitter
    • T. Röder, et al., 0.4% Absolute Efficiency Gain of Industrial Solar Cell by Laser Doped Selective Emitter, 34th IEEE PVSC, 2009, 871-873.
    • (2009) 34th IEEE PVSC , pp. 871-873
    • T. Röder1
  • 4
    • 78650128899 scopus 로고    scopus 로고
    • All Screen Printed Mass Produced Silicon Ink Selective Emitter Solar Cell
    • H. Antoniadis, et al., All Screen Printed Mass Produced Silicon Ink Selective Emitter Solar Cell, 35th IEEE PVSC, 2010, 1193-1196.
    • (2010) 35th IEEE PVSC , pp. 1193-1196
    • Antoniadis, H.1
  • 5
    • 80052091908 scopus 로고    scopus 로고
    • High efficiency selective emitter cell using patterned ion implantation
    • C.E. Dubé High efficiency selective emitter cell using patterned ion implantation Energy Procedia 8 2011 706 711
    • (2011) Energy Procedia , vol.8 , pp. 706-711
    • Dubé, C.E.1
  • 6
    • 84859959973 scopus 로고    scopus 로고
    • Optimizing Selective Emitter Technology in One Year of Full Scale Production
    • B. Tjahjono, et al., Optimizing Selective Emitter Technology in One Year of Full Scale Production, 26th EUPVSEC, 2011, 901-905.
    • (2011) 26th EUPVSEC , pp. 901-905
    • Tjahjono, B.1
  • 7
    • 0008812569 scopus 로고
    • Chemical etching of silicon, a temperature study in the acid system
    • Schwartz, and Robbins Chemical etching of silicon, a temperature study in the acid system Electronics and Chemical Society 108 04 1961 365 372
    • (1961) Electronics and Chemical Society , vol.108 , Issue.4 , pp. 365-372
    • Schwartz1    Robbins2
  • 9
    • 78650128870 scopus 로고    scopus 로고
    • The Etchback Selective Emitter Technology and Its Application to Multicrystalline Silicon
    • F. Book, et al., The Etchback Selective Emitter Technology and Its Application to Multicrystalline Silicon, 35th IEEEPVSC, 2010, 1309-1314
    • (2010) 35th IEEEPVSC , pp. 1309-1314
    • Book, F.1
  • 10
    • 0037399483 scopus 로고    scopus 로고
    • The influence of porous silicon on junction formation in silicon solar cell
    • K. Drabczyk The influence of porous silicon on junction formation in silicon solar cell Solar Energy Materials & Solar Cell 76 4 2003 545 551
    • (2003) Solar Energy Materials & Solar Cell , vol.76 , Issue.4 , pp. 545-551
    • Drabczyk, K.1
  • 11
    • 1642348480 scopus 로고    scopus 로고
    • Characterization and properties of a modified Si solar cell emitter by a porous Si layer
    • Z. Swiatek Characterization and properties of a modified Si solar cell emitter by a porous Si layer Materials Science and Engineering B 101 1-3 2003 291 296
    • (2003) Materials Science and Engineering B , vol.101 , Issue.13 , pp. 291-296
    • Swiatek, Z.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.