Porous-Silicon Formation in HF-HNO3-H2O Etchants

Russian Microelectronics

Volumn 31, Issue 2, 2002, Pages 88-96

  Starostina, E A ^a   Starkov, V V ^a   Vyatkin, A F ^a  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345757346     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1014337308494     Document Type: Article

References (16)

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