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Volumn 112, Issue 8, 2012, Pages

Electrically tunable electron spin lifetimes in GaAs(111)B quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; ELECTRICALLY TUNABLE; ELECTRON SPINS; GAAS; RELAXATION MECHANISM; SPIN DEPHASING; SPIN LIFETIMES; SPIN ORBITS; SPIN ORIENTATIONS; TUNABILITIES; WAVE VECTOR;

EID: 84868613773     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4759241     Document Type: Article
Times cited : (25)

References (36)
  • 1
    • 0000299162 scopus 로고
    • Spin orientation of electrons associated with the interband absorption of light in semiconductors
    • M. I. Dyakonov and V. I. Perel', Spin orientation of electrons associated with the interband absorption of light in semiconductors., Sov. Phys. JETP 33, 1053-1059 (1971).
    • (1971) Sov. Phys. JETP , vol.33 , pp. 1053-1059
    • Dyakonov, M.I.1    Perel, V.I.2
  • 2
    • 0001103704 scopus 로고
    • Spin relaxation of conduction electrons in noncentrosymmetric semiconductors
    • M. I. Dyakonov and V. I. Perel', Spin relaxation of conduction electrons in noncentrosymmetric semiconductors., Sov. Phys. Solid State 13, 3023-3026 (1972).
    • (1972) Sov. Phys. Solid State , vol.13 , pp. 3023-3026
    • Dyakonov, M.I.1    Perel, V.I.2
  • 3
    • 0000966431 scopus 로고
    • Spin relaxation of two-dimensional electrons in noncentrosymmetric semiconductors
    • M. I. Dyakonov and V. Y. Yu. Kachorovskii, Spin relaxation of two-dimensional electrons in noncentrosymmetric semiconductors., Sov. Phys. Semicond. 20, 110 (1986).
    • (1986) Sov. Phys. Semicond. , vol.20 , pp. 110
    • Dyakonov, M.I.1    Kachorovskii, V.Y.Yu.2
  • 4
    • 33746709694 scopus 로고
    • Theory of the effect of spin orbit coupling on magnetic resonance in some semiconductors
    • 10.1103/PhysRev.96.266
    • R. J. Elliot, Theory of the effect of spin orbit coupling on magnetic resonance in some semiconductors., Phys. Rev. 96, 266 (1954). 10.1103/PhysRev.96.266
    • (1954) Phys. Rev. , vol.96 , pp. 266
    • Elliot, R.J.1
  • 5
    • 19644400946 scopus 로고    scopus 로고
    • Anomalous spin dephasing in (110) GaAs quantum wells: Anisotropy and intersubband effects
    • 10.1103/PhysRevLett.93.147405
    • S. Döhrmann, D. Hägele, J. Rudolph, M. Bichler, D. Schuh, and M. Oestreich, Anomalous spin dephasing in (110) GaAs quantum wells: Anisotropy and intersubband effects., Phys. Rev. Lett. 93, 147405 (2004). 10.1103/PhysRevLett.93.147405
    • (2004) Phys. Rev. Lett. , vol.93 , pp. 147405
    • Döhrmann, S.1    Hägele, D.2    Rudolph, J.3    Bichler, M.4    Schuh, D.5    Oestreich, M.6
  • 6
    • 0000156870 scopus 로고
    • Spin relaxation of electrons due to scattering by holes
    • G. L. Bir, A. G. Aronov, and G. E. Pikus, Spin relaxation of electrons due to scattering by holes., Sov. Phys. JETP 42, 705 (1976).
    • (1976) Sov. Phys. JETP , vol.42 , pp. 705
    • Bir, G.L.1    Aronov, A.G.2    Pikus, G.E.3
  • 7
    • 35949007136 scopus 로고
    • Exciton spin dynamics in quantum wells
    • 10.1103/PhysRevB.47.15776
    • M. Z. Maialle, E. A. de Andrada e Silva, and L. J. Sham, Exciton spin dynamics in quantum wells., Phys. Rev. B 47, 15776 (1993). 10.1103/PhysRevB.47. 15776
    • (1993) Phys. Rev. B , vol.47 , pp. 15776
    • Maialle, M.Z.1    De Andrada Silva, E.E.A.2    Sham, L.J.3
  • 8
    • 0037101127 scopus 로고    scopus 로고
    • Spin relaxation of conduction electrons in bulk III-V semiconductors
    • 10.1103/PhysRevB.66.035207
    • P. H. Song and K. W. Kim, Spin relaxation of conduction electrons in bulk III-V semiconductors., Phys. Rev. B 66, 035207 (2002). 10.1103/PhysRevB.66. 035207
    • (2002) Phys. Rev. B , vol.66 , pp. 035207
    • Song, P.H.1    Kim, K.W.2
  • 9
    • 1842377449 scopus 로고    scopus 로고
    • Room-temperature spin memory in two-dimensional electron gases
    • 10.1126/science.277.5330.1284
    • J. M. Kikkawa, I. P. Smorchkova, N. Samarth, and D. D. Awschalom, Room-temperature spin memory in two-dimensional electron gases., Science 277 (5330), 1284-1287 (1997). 10.1126/science.277.5330.1284
    • (1997) Science , vol.277 , Issue.5330 , pp. 1284-1287
    • Kikkawa, J.M.1    Smorchkova, I.P.2    Samarth, N.3    Awschalom, D.D.4
  • 10
    • 4243098145 scopus 로고    scopus 로고
    • Resonant spin amplification in n-type GaAs
    • 10.1103/PhysRevLett.80.4313
    • J. M. Kikkawa and D. D. Awschalom, Resonant spin amplification in n-type GaAs., Phys. Rev. Lett. 80, 4313 (1998). 10.1103/PhysRevLett.80.4313
    • (1998) Phys. Rev. Lett. , vol.80 , pp. 4313
    • Kikkawa, J.M.1    Awschalom, D.D.2
  • 11
    • 14944353330 scopus 로고    scopus 로고
    • Spin relaxation dynamics of quasiclassical electrons in ballistic quantum dots with strong spin-orbit coupling
    • 10.1103/PhysRevB.70.245309
    • C.-H. Chang, A. G. Mal'shukov, and K. A. Chao, Spin relaxation dynamics of quasiclassical electrons in ballistic quantum dots with strong spin-orbit coupling., Phys. Rev. B 70, 245309 (2004). 10.1103/PhysRevB.70.245309
    • (2004) Phys. Rev. B , vol.70 , pp. 245309
    • Chang, C.-H.1    Mal'Shukov, A.G.2    Chao, K.A.3
  • 13
    • 33746216884 scopus 로고    scopus 로고
    • Suppression of spin relaxation in submicron InGaAs wires
    • 10.1103/PhysRevLett.97.036805
    • A. W. Holleitner, V. Sih, R. C. Myers, A. C. Gossard, and D. D. Awschalom, Suppression of spin relaxation in submicron InGaAs wires., Phys. Rev. Lett. 97, 036805 (2006). 10.1103/PhysRevLett.97.036805
    • (2006) Phys. Rev. Lett. , vol.97 , pp. 036805
    • Holleitner, A.W.1    Sih, V.2    Myers, R.C.3    Gossard, A.C.4    Awschalom, D.D.5
  • 14
    • 33646182669 scopus 로고    scopus 로고
    • Spin transport and manipulation by mobile potential dots in GaAs quantum wells
    • 10.1016/j.physe.2005.12.150
    • J. A. H. Stotz, R. Hey, P. V. Santos, and K. H. Ploog, Spin transport and manipulation by mobile potential dots in GaAs quantum wells., Physica E 32 (1-2), 446 (2006). 10.1016/j.physe.2005.12.150
    • (2006) Physica e , vol.32 , Issue.12 , pp. 446
    • Stotz, J.A.H.1    Hey, R.2    Santos, P.V.3    Ploog, K.H.4
  • 15
    • 30344486004 scopus 로고    scopus 로고
    • Temperature dependence of spin transport by dynamic quantum dots
    • 10.1016/j.mseb.2005.09.038
    • J. A. H. Stotz, R. Hey, and P. V. Santos, Temperature dependence of spin transport by dynamic quantum dots., Mater. Sci. Eng., B 126, 164-167 (2006). 10.1016/j.mseb.2005.09.038
    • (2006) Mater. Sci. Eng., B , vol.126 , pp. 164-167
    • Stotz, J.A.H.1    Hey, R.2    Santos, P.V.3
  • 16
    • 0001624546 scopus 로고    scopus 로고
    • Spin relaxation in GaAs(110) quantum wells
    • 10.1103/PhysRevLett.83.4196
    • Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, and H. Ohno, Spin relaxation in GaAs(110) quantum wells., Phys. Rev. Lett. 83, 4196-4199 (1999). 10.1103/PhysRevLett.83.4196
    • (1999) Phys. Rev. Lett. , vol.83 , pp. 4196-4199
    • Ohno, Y.1    Terauchi, R.2    Adachi, T.3    Matsukura, F.4    Ohno, H.5
  • 17
    • 33846534819 scopus 로고    scopus 로고
    • Anisotropic spin transport in (110) GaAs quantum wells
    • 10.1103/PhysRevLett.98.036603
    • O. D. D. Couto, Jr., F. Iikawa, J. Rudolph, R. Hey, and P. V. Santos, Anisotropic spin transport in (110) GaAs quantum wells., Phys. Rev. Lett. 98, 036603 (2007). 10.1103/PhysRevLett.98.036603
    • (2007) Phys. Rev. Lett. , vol.98 , pp. 036603
    • Couto Jr., O.D.D.1    Iikawa, F.2    Rudolph, J.3    Hey, R.4    Santos, P.V.5
  • 18
    • 56249129279 scopus 로고    scopus 로고
    • Spin noise spectroscopy in GaAs (110) quantum wells: Access to intrinsic spin lifetimes and equilibrium electron dynamics
    • 10.1103/PhysRevLett.101.206601
    • G. M. Müller, M. Römer, D. Schuh, W. Wegscheider, J. Hübner, and M. Oestreich, Spin noise spectroscopy in GaAs (110) quantum wells: Access to intrinsic spin lifetimes and equilibrium electron dynamics., Phys. Rev. Lett. 101 (20), 206601 (2008). 10.1103/PhysRevLett.101.206601
    • (2008) Phys. Rev. Lett. , vol.101 , Issue.20 , pp. 206601
    • Müller, G.M.1    Römer, M.2    Schuh, D.3    Wegscheider, W.4    Hübner, J.5    Oestreich, M.6
  • 19
    • 78649266879 scopus 로고    scopus 로고
    • Room temperature gate modulation of electron spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells
    • 10.1063/1.3514675
    • S. Iba, S. Koh, and H. Kawaguchi, Room temperature gate modulation of electron spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells., Appl. Phys. Lett. 97, 202102 (2010). 10.1063/1.3514675
    • (2010) Appl. Phys. Lett. , vol.97 , pp. 202102
    • Iba, S.1    Koh, S.2    Kawaguchi, H.3
  • 21
    • 15744390550 scopus 로고    scopus 로고
    • Suppression of the D'yakonov-Perel' spin-relaxation mechanism for all spin components in 111] zincblende quantum wells
    • 10.1103/PhysRevB.71.045313
    • X. Cartoixa, D. Z.-Y. Ying, and Y.-C. Chang, Suppression of the D'yakonov-Perel' spin-relaxation mechanism for all spin components in 111] zincblende quantum wells., Phys. Rev. B 71, 045313 (2005). 10.1103/PhysRevB.71. 045313
    • (2005) Phys. Rev. B , vol.71 , pp. 045313
    • Cartoixa, X.1    Ying, D.Z.-Y.2    Chang, Y.-C.3
  • 22
    • 20444455837 scopus 로고    scopus 로고
    • Spin-relaxation suppression by compensation of bulk and structural inversion asymmetries in [111]-oriented quantum wells
    • 10.1063/1.1858876
    • I. Vurgaftman and J. R. Meyer, Spin-relaxation suppression by compensation of bulk and structural inversion asymmetries in [111]-oriented quantum wells., J. Appl. Phys. 97 (5), 053707 (2005). 10.1063/1.1858876
    • (2005) J. Appl. Phys. , vol.97 , Issue.5 , pp. 053707
    • Vurgaftman, I.1    Meyer, J.R.2
  • 23
    • 78649277841 scopus 로고    scopus 로고
    • Spin relaxation in n-type (111) GaAs quantum wells
    • 10.1063/1.3504859
    • B. Y. Sun, P. Zhang, and M. W. Wu, Spin relaxation in n-type (111) GaAs quantum wells., J. Appl. Phys. 108, 093709 (2010). 10.1063/1.3504859
    • (2010) J. Appl. Phys. , vol.108 , pp. 093709
    • Sun, B.Y.1    Zhang, P.2    Wu, M.W.3
  • 24
    • 80053113419 scopus 로고    scopus 로고
    • Full electrical control of the electron spin relaxation in GaAs quantum wells
    • 10.1103/PhysRevLett.107.136604
    • A. Balocchi, Q. H. Duong, P. Renucci, B. L. Liu, C. Fontaine, T. Amand, D. Lagarde, and X. Marie, Full electrical control of the electron spin relaxation in GaAs quantum wells., Phys. Rev. Lett. 107, 136604 (2011). 10.1103/PhysRevLett.107.136604
    • (2011) Phys. Rev. Lett. , vol.107 , pp. 136604
    • Balocchi, A.1    Duong, Q.H.2    Renucci, P.3    Liu, B.L.4    Fontaine, C.5    Amand, T.6    Lagarde, D.7    Marie, X.8
  • 25
    • 0038541874 scopus 로고    scopus 로고
    • Nonballistic spin-field-effect transistor
    • 10.1103/PhysRevLett.90.146801
    • J. Schliemann, J. C. Egues, and D. Loss, Nonballistic spin-field-effect transistor., Phys. Rev. Lett. 90, 146801 (2003). 10.1103/PhysRevLett.90.146801
    • (2003) Phys. Rev. Lett. , vol.90 , pp. 146801
    • Schliemann, J.1    Egues, J.C.2    Loss, D.3
  • 26
    • 0000670619 scopus 로고    scopus 로고
    • Giant spin relaxation anisotropy in zinc-blende heterostructures
    • 10.1103/PhysRevB.60.15582
    • N. S. Averkiev and L. E. Golub, Giant spin relaxation anisotropy in zinc-blende heterostructures., Phys. Rev. B 60, 15582-15584 (1999). 10.1103/PhysRevB.60.15582
    • (1999) Phys. Rev. B , vol.60 , pp. 15582-15584
    • Averkiev, N.S.1    Golub, L.E.2
  • 29
    • 55349124934 scopus 로고    scopus 로고
    • Spin dynamics in (110) GaAs quantum wells under surface acoustic waves
    • 10.1103/PhysRevB.78.153305
    • O. D. D. Couto, Jr., R. Hey, and P. V. Santos, Spin dynamics in (110) GaAs quantum wells under surface acoustic waves., Phys. Rev. B 78, 153305 (2008). 10.1103/PhysRevB.78.153305
    • (2008) Phys. Rev. B , vol.78 , pp. 153305
    • Couto Jr., O.D.D.1    Hey, R.2    Santos, P.V.3
  • 31
    • 0009330489 scopus 로고
    • Intrasubband excitations and spin-splitting anisotropy in GaAs modulation-doped quantum wells
    • 10.1103/PhysRevB.47.16028
    • D. Richards, B. Jusserand, H. Peric, and B. Etienne, Intrasubband excitations and spin-splitting anisotropy in GaAs modulation-doped quantum wells., Phys. Rev. B 47, 16028-16031 (1993). 10.1103/PhysRevB.47.16028
    • (1993) Phys. Rev. B , vol.47 , pp. 16028-16031
    • Richards, D.1    Jusserand, B.2    Peric, H.3    Etienne, B.4
  • 32
    • 41549138240 scopus 로고    scopus 로고
    • All-optical measurement of Rashba coefficient in quantum wells
    • (Their defined Rashba coefficient α corresponds to 2 r 41, as it is used here.) 10.1103/PhysRevB.77.125344
    • P. S. Eldridge, W. J. H. Leyland, P. G. Lagoudakis, O. Z. Karimov, M. Henini, D. Taylor, R. T. Phillips, and R. T. Harley, All-optical measurement of Rashba coefficient in quantum wells., Phys. Rev. B 77, 125344 (2008). (Their defined Rashba coefficient α corresponds to 2 r 41, as it is used here.) 10.1103/PhysRevB.77.125344
    • (2008) Phys. Rev. B , vol.77 , pp. 125344
    • Eldridge, P.S.1    Leyland, W.J.H.2    Lagoudakis, P.G.3    Karimov, O.Z.4    Henini, M.5    Taylor, D.6    Phillips, R.T.7    Harley, R.T.8
  • 33
    • 0014801584 scopus 로고
    • Morphology of epitaxial growth of GaAs by a molecular beam method: The observation of surface structures
    • 10.1063/1.1659315
    • A. Y. Cho, Morphology of epitaxial growth of GaAs by a molecular beam method: The observation of surface structures., J. Appl. Phys. 41, 2780-2786 (1970). 10.1063/1.1659315
    • (1970) J. Appl. Phys. , vol.41 , pp. 2780-2786
    • Cho, A.Y.1
  • 34
    • 0011232718 scopus 로고
    • The molecular beam epitaxial growth of GaAs/GaAs(111)B: Doping and growth temperature studies
    • 10.1063/1.350638
    • D. A. Woolf, Z. Sobiesierski, D. I. Westwoood, and R. H. Williams, The molecular beam epitaxial growth of GaAs/GaAs(111)B: Doping and growth temperature studies., J. Appl. Phys. 71, 4908-4915 (1992). 10.1063/1.350638
    • (1992) J. Appl. Phys. , vol.71 , pp. 4908-4915
    • Woolf, D.A.1    Sobiesierski, Z.2    Westwoood, D.I.3    Williams, R.H.4
  • 35
    • 0027614470 scopus 로고
    • The homoepitaxial growth of GaAs(111)A and GaAs(111)B by molecular beam epitaxy: An investigation of the temperature-dependent surface reconstructions and bulk electrical conductivity transitions
    • 10.1088/0268-1242/8/6/014
    • D. A. Woolf, D. I. Westwoood, and R. H. Williams, The homoepitaxial growth of GaAs(111)A and GaAs(111)B by molecular beam epitaxy: An investigation of the temperature-dependent surface reconstructions and bulk electrical conductivity transitions., Semicond. Sci. Technol. 8, 1075-1081 (1993). 10.1088/0268-1242/8/6/014
    • (1993) Semicond. Sci. Technol. , vol.8 , pp. 1075-1081
    • Woolf, D.A.1    Westwoood, D.I.2    Williams, R.H.3


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