Spin relaxation in n -type (111) GaAs quantum wells

Journal of Applied Physics

Volumn 108, Issue 9, 2010, Pages

  Sun, B Y ^a,b   Zhang, P ^b   Wu, M W ^a,b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCH EQUATION; CANCELLATION EFFECTS; D'YAKONOV-PEREL; GAAS QUANTUM WELLS; GATE VOLTAGES; GROWTH DIRECTIONS; IN-PLANE; INHOMOGENEOUS BROADENING; QUANTUM WELL; RASHBA SPIN-ORBIT COUPLING; SPIN RELAXATION; SPIN RELAXATION TIME; SPIN-POLARIZED ELECTRONS; TEMPERATURE DEPENDENCE;

GALLIUM ALLOYS; GALLIUM ARSENIDE; MAGNETIC FIELDS; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; TEMPERATURE DISTRIBUTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 78649277841     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3504859     Document Type: Article

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