Tuning of structure inversion asymmetry by the δ -doping position in (001)-grown GaAs quantum wells

Applied Physics Letters

Volumn 94, Issue 24, 2009, Pages

  Lechner, V ^a   Golub, L E ^b   Olbrich, P ^a   Stachel, S ^a   Schuh, D ^a   Wegscheider, W ^a,c   Bel'Kov, V V ^a,b   Ganichev, S D ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BULK INVERSION ASYMMETRY; DELTA-DOPING; DOPED STRUCTURES; GAAS QUANTUM WELLS; GROWTH PROCESS; IMPURITY SEGREGATION; INVERSION ASYMMETRY; MODULATION-DOPED; PHOTOGALVANIC EFFECTS;

DOPING (ADDITIVES); GALLIUM ALLOYS; MAGNETIC FIELDS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; TUNING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 67649220945     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3156027     Document Type: Article

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