Singlet oxygen inhibits nonradiative defects in porous silicon

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 6, 2009, Pages 1268-1272

  Pikulev, V B ^a   Kuznetsov, S N ^a   Kuznetsov, A S ^b   Saren, A A ^a   Gurtov, V A ^a  

^a PETROZAVODSK STATE UNIVERSITY   (Russian Federation)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EX SITU; EXPERIMENTAL EVIDENCE; NON-RADIATIVE RECOMBINATIONS; NONRADIATIVE DEFECTS; PHOTOLUMINESCENCE ENHANCEMENT; PL EFFICIENCY; POROUS LAYERS; SELECTIVE OXIDATION; SILICON NANOCRYSTALS; SINGLE DEFECT; SINGLET OXYGEN;

ADSORPTION; OXIDATION; OZONE; SURFACE DEFECTS;

POROUS SILICON;

EID: 67649978271     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200881055     Document Type: Article

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