Scanning tunneling microscopy of interface properties of Bi 2Se 3 on FeSe

Journal of Physics Condensed Matter

Volumn 24, Issue 47, 2012, Pages

  Wang, Yilin ^a   Jiang, Yeping ^a,b   Chen, Mu ^a,b   Li, Zhi ^a   Song, Canli ^a,b   Wang, Lili ^a   He, Ke ^a   Chen, Xi ^b   Ma, Xucun ^a   Xue, Qi Kun ^a,b  

^a INSTITUTE OF PHYSICS   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE PROPERTY; LOW-TEMPERATURE SCANNING TUNNELING MICROSCOPY; SPATIALLY INHOMOGENEOUS; TUNNELING SPECTRA; VAN DER WAALS EPITAXY;

BISMUTH; CHARGE TRANSFER; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; SCANNING TUNNELING MICROSCOPY; VAN DER WAALS FORCES;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84868310581     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/24/47/475604     Document Type: Article

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