Change point analysis of matrix dependent photoluminescence intermittency of single CdSe/ZnS quantum dots with intermediate intensity levels

Chemical Physics

Volumn 406, Issue , 2012, Pages 9-14

  Schmidt, Robert ^a   Krasselt, Cornelius ^a   Von Borczyskowski, Christian ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

CdSe ZnS; Change point analysis; Hole trapping; Hydroxyl groups; Intermediate intensity levels; Photoluminescence intermittency; Polymers; Semiconductor quantum dots; Trap states

Indexed keywords

EID: 84868213893     PISSN: 03010104     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.chemphys.2012.02.018     Document Type: Conference Paper

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