메뉴 건너뛰기




Volumn , Issue , 2008, Pages 519-523

Carrier velocity in carbon nano tube field effect transistor

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRICAL DISTRIBUTIONS; CARRIER VELOCITY; CHARGE TRANSPORT; DRIFT VELOCITIES; FERMI VELOCITIES; GATE INSULATOR; HIGH ELECTRIC FIELDS; HIGH MOBILITY; HIGH-SPEED APPLICATIONS; MOSFET CHANNELS; SATURATION VELOCITY; THERMAL VELOCITY; ZERO FIELDS;

EID: 65949118480     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMELEC.2008.4770378     Document Type: Conference Paper
Times cited : (5)

References (10)
  • 1
    • 56849117106 scopus 로고    scopus 로고
    • Numerical study of quantum transport in carbon nanotube transistors
    • doi:10.1016/j.matcom.2007.09.004
    • M. Pourfath, et al., Numerical study of quantum transport in carbon nanotube transistors, Math. Comput. Simul. in press (2007),doi:10.1016/j.matcom. 2007.09.004
    • (2007) Math. Comput. Simul. in Press
    • Pourfath, M.1
  • 2
    • 0005836651 scopus 로고    scopus 로고
    • Single and multi- wall carbon nanotube field-effect transistors
    • R. Martel, T. Schmidt, H.R. Shea, T. Hertel, and Ph. Avouris, "Single and Multi- Wall Carbon Nanotube Field-Effect Transistors, Appl. Phys. Lett., 73, pp. 2447-2449, 1998.
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 2447-2449
    • Martel, R.1    Schmidt, T.2    Shea, H.R.3    Hertel, T.4    Avouris, Ph.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.