Electric field-induced emission enhancement and modulation in individual cdse nanowires

ACS Nano

Volumn 6, Issue 10, 2012, Pages 9133-9140

  Vietmeyer, Felix ^a   Tchelidze, Tamar ^a,b   Tsou, Veronica ^a,c   Janko, Boldizsar ^a   Kuno, Masaru ^a  

^a UNIVERSITY OF NOTRE DAME   (United States)

^b TBILISI STATE UNIVERSITY   (Georgia)

^c UNIVERSITY OF WATERLOO   (Canada)

Author keywords

CdSe; defects; emission intensity modulation; nanowire; phonon assisted tunneling; Poole Frenkel effect; semiconductor

Indexed keywords

CARRIER DETRAPPING; CDSE; DEFECT SITES; DIRECT VISUALIZATION; ELECTRIC FIELD STRENGTH; EMISSION ENHANCEMENT; EMISSION INTENSITY; FIELD-INDUCED; FIELD-INDUCED MODULATION; KINETIC MODELS; LOW-DIMENSIONAL MATERIALS; NEGATIVE BIAS; NONRADIATIVE RELAXATION PROCESS; OPTICAL TECHNIQUE; PARALLEL PLATES; PHONON ASSISTED TUNNELING; PHOTOLUMINESCENCE QUANTUM YIELDS; PHOTOPHYSICS; POOLE-FRENKEL EFFECT; TRAP STATE;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; DEFECTS; ELECTRIC FIELDS; NANOWIRES; QUANTUM YIELD; SEMICONDUCTOR MATERIALS;

MODULATION;

CADMIUM DERIVATIVE; CADMIUM SELENIDE; NANOMATERIAL; SELENIUM DERIVATIVE;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; ELECTROMAGNETIC FIELD; MATERIALS TESTING; PARTICLE SIZE; ULTRASTRUCTURE;

CADMIUM COMPOUNDS; COMPUTER SIMULATION; ELECTROMAGNETIC FIELDS; MATERIALS TESTING; MODELS, CHEMICAL; NANOSTRUCTURES; PARTICLE SIZE; SELENIUM COMPOUNDS;

EID: 84867809584     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn3033997     Document Type: Article

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