Electron migration limits the rate of photobrightening in thin films of cdse quantum dots in a dry N2 (g) atmosphere

Journal of Physical Chemistry C

Volumn 115, Issue 9, 2011, Pages 3654-3662

  Tice, Daniel B ^a   Frederick, Matthew T ^a   Chang, Robert P H ^b   Weiss, Emily A ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

^b Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CDSE QUANTUM DOTS; ELECTRON MIGRATION; EXCITATION SOURCES; LOWER ENERGIES; MIGRATION MECHANISMS; NON-RADIATIVE; PHOTO-INDUCED; PHOTOBRIGHTENING; PHOTODARKENING; PHOTOEXCITED ELECTRONS; PHOTOLUMINESCENCE ENHANCEMENT; SHALLOW TRAPS; SURFACE PASSIVATION; TIME DEPENDENCE; TRANSIENT ABSORPTION MEASUREMENTS; ULTRA-FAST;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; ELECTRONS; EXCITED STATES; PASSIVATION; PHOTOEXCITATION; PHOTOLUMINESCENCE; THICK FILMS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79952283647     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp2005452     Document Type: Article

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