Robust hall effect magnetic field sensors for operation at high temperatures and in harsh radiation environments

IEEE Transactions on Magnetics

Volumn 48, Issue 11, 2012, Pages 4421-4423

  Abderrahmane, Abdelkader ^a   Koide, Shota ^a   Sato, Shin Ichiro ^b   Ohshima, Takeshi ^b   Sandhu, Adarsh ^a,c   Okada, Hiroshi ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Compound semiconductor; Hall effect devices; Ion radiation effects; Robust stability

Indexed keywords

ALGAN/GAN; COMPOUND SEMICONDUCTORS; FLUENCES; HALL SENSOR; HALL-EFFECT SENSORS; HARSH RADIATION ENVIRONMENT; HETERO INTERFACES; HIGH SENSITIVITY; HIGH TEMPERATURE; ION RADIATION EFFECTS; MAGNETIC FIELD SENSORS; MAGNETOELECTRIC PROPERTIES; ROBUST STABILITY; SHEET CARRIER DENSITIES;

ELECTRON GAS; GALLIUM NITRIDE; HALL EFFECT; HALL EFFECT DEVICES; HALL EFFECT TRANSDUCERS;

HETEROJUNCTIONS;

EID: 84867799866     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2012.2196986     Document Type: Review

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