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Volumn 27, Issue 2, 2009, Pages 1006-1010
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Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 °c
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVE AREAS;
ALGAN GAN;
ATOMIC FORCES;
BAND GAPS;
COMPARATIVE STUDIES;
HALL COEFFICIENTS;
HALL PROBE SENSORS;
HALL PROBES;
HALL SENSORS;
HARD DISCS;
HIGH TEMPERATURES;
HIGH VACUUMS;
IMAGING CAPABILITIES;
LOW-NOISE IMAGES;
MAGNETIC CHARACTERISTICS;
NOVEL METHODS;
OPTICAL LITHOGRAPHIES;
PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTORS;
QUARTZ TUNING FORKS;
REACTIVE IONS;
SCANNING HALL PROBE MICROSCOPIES;
SERIES RESISTANCES;
SIMPLE OPERATIONS;
THERMAL ACTIVATIONS;
TWO-DIMENSIONAL ELECTRON GASSES (2DEG);
UPPER LIMITS;
VARIABLE TEMPERATURES;
WIDE-BAND GAP SEMICONDUCTORS;
WORKING TEMPERATURES;
ATMOSPHERIC PRESSURE;
ATMOSPHERIC TEMPERATURE;
CARRIER CONCENTRATION;
ELECTRON GAS;
ELECTRON MOBILITY;
ELECTRONS;
ENERGY GAP;
GALLIUM NITRIDE;
GALVANOMAGNETIC EFFECTS;
HALL MOBILITY;
HIGH ELECTRON MOBILITY TRANSISTORS;
MAGNETIC FIELDS;
OXIDE MINERALS;
PHOTOLITHOGRAPHY;
QUARTZ;
REACTIVE ION ETCHING;
SCANNING;
SECURITY OF DATA;
SEMICONDUCTING SILICON COMPOUNDS;
SENSORS;
SILICON;
SUPERCONDUCTING MATERIALS;
TRANSISTORS;
TWO DIMENSIONAL ELECTRON GAS;
PROBES;
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EID: 64549133890
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.3056172 Document Type: Article |
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Times cited : (2)
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References (10)
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