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Japanese Journal of Applied Physics

Volumn 51, Issue 10, 2012, Pages

Contact resistance as an origin of the channel-length-dependent threshold voltage in organic field-effect transistors

(5) Weis, Martin a Lee, Keanchuan b Taguchi, Dai b Manaka, Takaaki b Iwamoto, Mitsumasa b

a SLOVAK UNIVERSITY OF TECHNOLOGY (Slovakia)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; POTENTIAL DROP;

CONTACT RESISTANCE; DIELECTRIC MATERIALS; ORGANIC FIELD EFFECT TRANSISTORS;

THRESHOLD VOLTAGE;

EID: 84867768450 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.100205 Document Type: Article

Times cited : (17)

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