Gradual channel approximation models for organic field-effect transistors: The space-charge field effect

Journal of Applied Physics

Volumn 111, Issue 5, 2012, Pages

  Weis, Martin ^a  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL APPROXIMATION; CURRENT-VOLTAGE RELATIONS; DRAIN ELECTRODES; INJECTED CARRIERS; LINEAR POTENTIAL; NONLINEAR POTENTIAL; POTENTIAL DROP; POTENTIAL PROFILES; SATURATION REGION; SPACE CHARGE FIELD;

PHYSICAL PROPERTIES; PHYSICS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 84858955633     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3691793     Document Type: Article

References (24)

1. C. Huang, J. E. West, and H. E. Katz, Adv. Funct. Mater. 17, 142 (2007). 10.1002/(ISSN)1616-3028
2. M. G. Kane, Flexible Electronics: Materials and Applications, edited by, W. S. Wong, and, A. Salleo, (Springer, New York, 2009), p. 215. 10.1007/978-0-387-74363-9
3. G. Horowitz, Organic Electronics, Materials, Manufacturing and Applications, edited by, H. Klauk, (Wiley VCH, Weinheim, 2006), p. 3.
4. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970).
5. R. Tecklenburg, G. Paasch, and S. Scheinert, Adv. Mater. Opt. Electron. 8, 285 (1998). 10.1002/(ISSN)1099-0712
6. G. Horowitz, Adv. Mater. 10, 365 (1998). 10.1002/(ISSN)1521-4095
7. L. Bürgi, H. Sirringhaus, and R. H. Friend, Appl. Phys. Lett. 80, 2913 (2002). 10.1063/1.1470702
8. K. P. Puntambekar, P. V. Pesavento, and C. D. Frisbie, Appl. Phys. Lett. 83, 5539 (2003). 10.1063/1.1637443
9. W. R. Silveira and J. A. Marohn, Phys. Rev. Lett. 93, 116104 (2004). 10.1103/PhysRevLett.93.116104
10. R. Scholz, D. Lehmann, A.-D. Müller, F. Müller, and D. R. T. Zahn, Phys. Status Solidi A 205, 591 (2008). 10.1002/pssa.v205:3
11. T. Manaka, E. Lim, R. Tamura, and M. Iwamoto, Nature Photon. 1, 581 (2007). 10.1038/nphoton.2007.172
12. T. C. Anglin, D. B. O'Brien, and A. M. Massari, J. Phys. Chem. C 114, 17629 (2010). 10.1021/jp103636s
13. H. Matsui and T. Hasegawa, Appl. Phys. Lett. 95, 223301 (2009). 10.1063/1.3268465
14. C. Sciascia, M. Celebrano, M. Binda, D. Natali, G. Lanzani, and J. R. Cabanillas-Gonzalez, Org. Electron. 13, 66 (2012). 10.1016/j.orgel.2011.09.023
15. S. Haas, H. Matsui, and T. Hasegawa, Phys. Rev. B 82, 161301 (2010). 10.1103/PhysRevB.82.161301
16. C. Sciascia, N. Martino, T. Schuettfort, B. Watts, G. Grancini, M. R. Antognazza, M. Zavelani-Rossi, C. R. McNeill, and M. Caironi, Adv. Mater. 23, 5086 (2011). 10.1002/adma.201102410
17. W. Shockley, Proc. IRE 40, 1365 (1952). 10.1109/JRPROC.1952.273964
18. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices, 2nd ed. (Cambridge University Press, Cambridge, 2009), p. 156.
19. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 438.
20. G. K. Mor, S. Kim, M. Paulose, O. K. Varghese, K. Shankar, J. Basham, and C. A. Grime, Nano Lett. 9, 4250 (2009);
21. W. Brütting, Physics of Organic Semiconductors, edited by, W. Brütting, (Wiley-VCH Verlag, Weinheim, 2005), p. 9. 10.1021/nl9024853
22. A. S. Grove, Physics and Technology of Semiconductor Devices (Wiley, New York, 1967).
23. M. Weis, T. Manaka, and M. Iwamoto, J. Appl. Phys. 105, 024505 (2009). 10.1063/1.3062601
24. H. Prinz, Hochspannungsfelder (R. Oldenbourg Verlag, München, 1969), p. 79.