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Volumn 5, Issue 11, 2012, Pages 9618-9625

Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon

(10) Zhang, Li Li a Zhao, Xin a,b Ji, Hengxing a Stoller, Meryl D a Lai, Linfei a Murali, Shanthi a McDonnell, Stephen c Cleveger, Brandon a Wallace, Robert M c Ruoff, Rodney S a

a The University of Texas at Austin (United States)

b DONGHUA UNIVERSITY (China)

c The University of Texas at Dallas (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON ELECTRODE; DIRAC POINT; DOPANT CONCENTRATIONS; ELECTRICAL DOUBLE LAYERS; INTERFACIAL CAPACITANCE; N-DOPED; N-DOPING; NITROGEN-DOPING; PHYSICAL MECHANISM; POROUS STRUCTURES; QUANTUM CAPACITANCE; SINGLE LAYER;

DOPING (ADDITIVES); ELECTRODES; ELECTRONIC STRUCTURE; FUNCTIONAL GROUPS; GRAPHENE; MONOLAYERS; QUANTUM THEORY;

CAPACITANCE;

CARBON; CONCENTRATION (COMPOSITION); ELECTRODE; NITROGEN; POROSITY; QUANTUM MECHANICS;

EID: 84867644255 PISSN: 17545692 EISSN: 17545706 Source Type: Journal
DOI: 10.1039/c2ee23442d Document Type: Article

Times cited : (392)

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