Effect of Si doping on near-infrared emission and energy transfer of Bismuth in silicate glasses

Journal of Non-Crystalline Solids

Volumn 358, Issue 2, 2012, Pages 261-264

  Dai, Nengli ^a   Luan, Huaixun ^a   Xu, Bing ^b   Yang, Lvyun ^a   Sheng, Yubang ^a   Liu, Zijun ^a   Li, Jinyan ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b WUHAN MECHANICAL TECHNOLOGY COLLEGE   (China)

Author keywords

Energy transfer; Low concentration Bismuth; Near infrared emission; Optical material; Si

Indexed keywords

ACTIVE CENTER; ACTIVE IONS; BI-DOPED; CO-DOPING; EFFICIENT ENERGY TRANSFER; EMISSION INTENSITY; LOW CONCENTRATIONS; NEAR INFRARED; NEAR INFRARED EMISSION; NEAR INFRARED LUMINESCENCE; NEAR-INFRARED EMISSIONS; SI-DOPING; SILICATE GLASS;

BISMUTH; ENERGY TRANSFER; GLASS; INFRARED DEVICES; OPTICAL MATERIALS; SEMICONDUCTOR DOPING; SILICATES; YTTERBIUM;

SILICON;

EID: 81855161886     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2011.09.023     Document Type: Article

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