Thermoelectric properties of p-type Bi 0.5Sb 1.5Te 2.7Se 0.3 fabricated by high pressure sintering method

Journal of Applied Physics

Volumn 112, Issue 7, 2012, Pages

  Xu, Gui Ying ^a   Niu, Si Tong ^a   Wu, Xiao Feng ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE AND MORPHOLOGY; FIGURE OF MERITS; GOOD STABILITY; HIGH PRESSURE; HIGH PRESSURE SINTERING; HIGH TEMPERATURE; HIGH-PRESSURE AND TEMPERATURES; P-TYPE; THERMOELECTRIC PROPERTIES; X-RAY DIFFRACTION METHOD;

ELECTRIC CONDUCTIVITY; HIGH PRESSURE EFFECTS; NANOSTRUCTURES; SCANNING ELECTRON MICROSCOPY; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; X RAY DIFFRACTION;

SINTERING;

EID: 84867488910     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4754840     Document Type: Article

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