Thermoelectric properties of Cu-doped p-type pseudo-binary CuxBi0.5Sb1.5-xTe3 (x = 0.05-0.4) alloys prepared by spark plasma sintering

Scripta Materialia

Volumn 55, Issue 4, 2006, Pages 371-374

  Cui, J L ^a   Xue, H F ^b   Xiu, W J ^b   Yang, W ^a   Xu, X B ^a  

^a NINGBO UNIVERSITY OF TECHNOLOGY   (China)

^b CHINA UNIVERSITY OF MINING AND TECHNOLOGY   (China)

Author keywords

Compound semiconductor; Electrical conductivity; Spark plasma sintering; Thermal conductivity

Indexed keywords

BISMUTH ALLOYS; COPPER; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; LATTICE CONSTANTS; SEMICONDUCTOR MATERIALS; SINTERING; TERNARY SYSTEMS; THERMAL CONDUCTIVITY; THERMOELECTRICITY;

COMPOUND SEMICONDUCTOR; ELECTRICAL CONDUCTIVITY; SPARK PLASMA SINTERING;

COPPER ALLOYS;

EID: 33744823770     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2006.04.012     Document Type: Article

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