Electrical and thermoelectric properties of 90% Bi2Te3-5% Sb2Te3-5% Sb2Se3 single crystals doped with SbI3

Scripta Materialia

Volumn 40, Issue 1, 1998, Pages 49-56

  Hyun, Dow Bin ^a   Oh, Tae Sung ^b   Hwang, Jong Seung ^a   Shim, Jae Dong ^a   Kolomoets, N V ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Hong Ik University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; BAND STRUCTURE; CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRIC PROPERTIES; HALL EFFECT; SEEBECK EFFECT; SINGLE CRYSTALS; THERMAL CONDUCTIVITY; THERMAL VARIABLES MEASUREMENT;

ANTIMONY IODINE COMPOUNDS; BANDGAP ENERGY; BISMUTH TELLURIUM ANTIMONY SELINIUM SINGLE CRYSTALS; HALL COEFFICIENT;

BISMUTH ALLOYS;

EID: 0032483837     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-6462(98)00393-5     Document Type: Article

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