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Volumn 61, Issue 7, 2012, Pages 1065-1069

Formation of the ferromagnetic semiconductor InMnP:Zn through low-temperature annealing by using Mn/InP:Zn bilayer

Author keywords

Ferromagnetic properties; InMnP; Low temperature annealing; MBE; MOCVD

Indexed keywords


EID: 84867472934     PISSN: 03744884     EISSN: 19768524     Source Type: Journal    
DOI: 10.3938/jkps.61.1065     Document Type: Article
Times cited : (1)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.